Development of a Soft Process for CdTe Solar Cell using Photo-assisted Electrodeposition
Development of a Soft Process for CdTe Solar Cell using Photo-assisted Electrodeposition
批准号:
14350399
负责人:
HIRATO Tetsuji
金额:
$9.92万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2002
资助国家:
日本
项目状态:
已结题
起止时间:
2002 至 2004
中文摘要
为了开发一种新的CdTe薄膜太阳电池软工艺,研究了氨性碱性电解液中光辅助电沉积CdTe的工艺。用电阻率和霍耳效应测试了电沉积的CdTe多晶层的电学性能。电沉积态的CdTe多晶层为p型,电阻率为10^7-10^9Ω cm,载流子密度为10^9- 10^9 Ω cm<11><-3>,迁移率约为10^10 Ω cm。1 cm ^2 V^<-1>s^<-1>。来自碱性浴的CdTe层的这种高电阻率可能导致低效率的太阳能电池。用透射电子显微镜研究了碱性电解液中电沉积碲化镉层的微观结构,并与传统的酸性硫酸盐电解液进行了比较。从基本电解质作为^-沉积的CdTe层由随机取向的晶粒尺寸为约。10 nm的微晶,而那些从酸性电解质由有缺陷的柱状晶粒与优选的<111>生长方向。每个柱状体的直径约为150 nm。从基本电解质的多晶CdTe沉积物的小晶粒尺寸表明,在电沉积过程中经常发生新的晶粒的成核。通过在Ar气氛中在573 K下退火1 h,来自基本电解质的CdTe晶粒生长约四倍,但同时,在晶界处形成纳米空隙。相比之下,CdTe晶粒从酸性电解质不生长退火相同的条件。由于大的晶粒尺寸对于用于高效率太阳能电池的CdTe层是期望的,因此重要的是通过退火控制电沉积期间新晶粒的成核和CdTe沉积物的晶粒生长。
英文摘要
To develop a new soft process for CdTe thin layer solar cell, photo-assisted electrodeposition of CdTe from ammoniacal basic electrolytes was investigated. The electrical properties of polycrystalline CdTe layers electrodeposited were examined by resistivity and Hall effect measurement, As-deposited CdTe layers were found to be p-type with resistivity of 10^7-10^9Ω cm, carrier density of 10^9-10^<11> cm^<-3>, and mobility ca. 1 cm^2 V^<-1> s^<-1>. This high resistivity of CdTe layer from basic baths probably leads to low-efficiency solar cells. The microstructures of CdTe layers electrodeposited from basic electrolytes were investigated by transmission electron microscopy and compared with those from a conventional acidic sulfate electrolyte. As^- deposited CdTe layers from a basic electrolyte were composed of randomly oriented crystallites with a grain size of ca.10 nm, while those from an acidic electrolyte consisted of defective columnar grains with a <111> preferred growth orientation. Each of the columnar has a diameter of of ca.150 nm. The small grain size of the polycrystalline CdTe deposits from the basic electrolyte suggests that nucleation of new grains occurs frequently during electrodeposition. By annealing at 573 K for 1 h in an Ar atmosphere, CdTe grains from the basic electrolyte grew by about a factor of four, but at the same time, nano-voids were formed at the grain boundaries. In contrast, CdTe grains from the acidic electrolyte did not grow by annealing the same conditions. Since a large grain size is desirable for CdTe layers to be used in high-efficiency solar cells, it is important to control the nucleation of new grains during electrodeposition and the grain growth of CdTe deposits by annealing.
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Electrical Properties of CdTe Layers Electrodeposited from Ammoniacal Basic Electrolytes
氨碱性电解质电沉积 CdTe 层的电性能
DOI:
--
发表时间:
2003
期刊:
Journal of the Electrochemical Society 150(6)
影响因子:
--
作者:
[M.Miyake, K.Murase, T.Hirato, Y.Awakura]
通讯作者:
Y.Awakura
Microstructure of CdTe Semiconductor Layers Electrodeposite From Basic and Acidic Aqueous Solutions
碱性和酸性水溶液电沉积 CdTe 半导体层的微观结构
DOI:
--
发表时间:
2003
期刊:
Materia Japan 42(12)
影响因子:
--
作者:
[M.Miyake, H.Inui, K.Murase, T.Hirato, Y.Awakura]
通讯作者:
Y.Awakura
K.Murase: "Electrodeposition of Thin-Layered CdTe Semiconductor from Basic Aqueous Solutions"Metallurgical and Materials Processing Principles and Technologies (Yazawa International Symposium), Vol.3: Aqueous and Electrochemical Processing. 51-64 (2003)
K.Murase:“从碱性水溶液中电沉积薄层 CdTe 半导体”冶金和材料加工原理和技术(矢泽国际研讨会),第 3 卷:水和电化学加工。
DOI:
--
发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
酸性クエン酸水溶液からのCdTe薄膜電析
酸性柠檬酸水溶液电沉积 CdTe 薄膜
DOI:
--
发表时间:
2004
期刊:
表面技術 55(5)
影响因子:
--
作者:
[K.Murase, K.Arai, Y.Awakura, M.Miyake, 邑瀬邦明]
通讯作者:
邑瀬邦明
湿式法による太陽電池用CdTe薄膜材料の作製
湿法制备太阳能电池用CdTe薄膜材料
DOI:
--
发表时间:
2003
期刊:
表面技術 54(12)
影响因子:
--
作者:
[粟倉泰弘, 邑瀬邦明]
通讯作者:
邑瀬邦明
共 32 条
Electrodeposition of bright and purified aluminum coatings from organic solvent baths with additives
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批准号:24360308
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.32万
-
财政年份:2012
-
负责人:HIRATO Tetsuji
-
依托单位:
Development of alloy plating with high corrosion resistivity without chromate treatments-Addition of self healing property by valence fluctuation
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批准号:19360340
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.98万
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财政年份:2007
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负责人:HIRATO Tetsuji
-
依托单位:
IMPROVEMENT OF ELECTRIC PROPERTIES OF ELECTRODEPOSITED CdTe FOR SOLAR CELL BY MICROSTRUCTURE CONTROL
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批准号:17360370
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$10.05万
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财政年份:2005
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负责人:HIRATO Tetsuji
-
依托单位:
Metal Deposition Process from Quaternary Ammonium Triflate-type Non-aluminate Room Temperature Molten Salts
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批准号:12650733
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.3万
-
财政年份:2000
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负责人:HIRATO Tetsuji
-
依托单位:
Preparetion of Rare-earth Metal Films by Electrochemical Deposition from Non-aqueous Madia with High-purity
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批准号:09650808
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$1.86万
-
财政年份:1997
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负责人:HIRATO Tetsuji
-
依托单位:
海外基金