Fabrication of Infrared Light Emitting Diodes on Er-doped Si Substrates

(1) 2000年的结果：在Si中共注入Er和0（最大浓度：1x10^<19>cm^<-3>）诱导的非晶层在衬底或表面晶层与非晶层的界面两侧重新结晶。在固相外延（SPE）过程中，铒开始从两侧偏析，并在表面附近形成浓度峰。在SPE开始时，0随Er移动，并具有相同的浓度分布，形成了具有立方对称的Er-0光学中心。（111）Si的发光强度是（100）Si的2 ~ 3倍。(a)在4.2K-100K，波长分辨率为1.4nm的条件下，测量了从er光心出发的具有立方对称的1.537μm主发光线的发光寿命。实验证实，除去背景信号的影响，电子-空穴对到er中心的能量传递时间τ_T约为1 ns，这与之前的估计值更吻合。虽然τ_T与所测范围内的温度有轻微的关系，但为了进行模拟讨论，还需要进行更多的研究。(b)在Er和0共注入的非晶硅中，通过激光退火成功地实现了Er的无偏析掺杂，最大掺杂浓度为1x10^<19> cm^<-3>。采用KrF准分子激光（0.4 ~ 0.6 j /cm^2, 10 ~ 100脉冲）进行退火。退火后的样品没有发光，900°C的热退火对er中心的光学活化是必要的。结果表明，在快速激光退火过程中，Er与0之间的相互作用是不完全的。CAICISS观测表明，p型层在掺铒的n-Si层上外延生长。整流I-V特性显示正向电流方向的阈值电压为0.4 V，但由于结结构不合理，该器件结构不能成功用于电致发光。在这些研究中建立了一个基本的装置过程。少

(1) Results in 2000The amorphized layers induced with co-implantation of Er and 0 (maximum concentration; 1x10^<19>cm^<-3>) in Si are recrystallized from both sides of the interface between the substrate or the surface crystalline layer and the amorphized layer. Er begins to segregate form the both sides during the solid phase epitaxy (SPE), and forms a concentration peak near the surface. 0 moves with Er at the beginning of the SPE, and has the same concentration profile, resulting in the formation of Er-0 optical centers with a cubic symmetry. The luminescence intensity is 2 to 3 times larger in (111)Si than (100)Si.(2) Results in 2001(a) The luminescence lifetime of the 1.537μm main luminescence line from the Er-optical centers with a cubic symmetry was measured at 4.2K-100K with a wavelength resolution of 1.4nm. The energy transfer time τ_T from electron-hole pairs to Er-centers was experimentally confirmed to be about 1 ns by removing the effect of background signals, which agrees … More with the value estimated earlier. Although τ_T is slightly dependent on the temperature in the range examined, more investigations are necessary for stimulated discussion.(b) Er is successfully doped without segregation by laser annealing in amorphized Si co-implanted with Er and 0 with a maximum concentration of 1x10^<19> cm^<-3>. A KrF excimer laser (0.4-0.6J/cm^2, 10-100 pulses) was used for annealing. Luminescence was not obtained in as-annealed samples, and thermal annealing at 900 °C is necessary for optical activation of Er-centers. This results shows that the interaction between Er and 0 is incomplete during the fast laser-annealing period.c A device structure of p-Si/Er-doped n-Si/n-Si was fabricated with a MBE technique. The CAICISS observations show that the p-type layer was grown epitaxially on the Er-doped n-Si layer. A rectifying I-V property shows a threshold voltage 0.4 V in the forward current direction, but this device structure is not successful for electro-luminescence due to inadequate junction structure. A fundamental device process was established in these investigations. Less