Study on suppression of fluctuation in semiconductor electrical characteristics by single ion inplantaticn

为了通过逐个注入掺杂剂原子来精确控制纳米级半导体中的固态物理和化学性质，从而开发单离子注入的潜力，我们展示了在超细半导体器件中的电特性的控制和在催化离子-用<th>SIX方法首次从实验上研究了掺杂原子位置对V_ in硅线MOSFET的影响。P单离子以100 nm的间隔注入到n型沟道区。V_<th>的评估和比较的常规FET中，掺杂原子是随机引入的。结果表明，<th>具有有序掺杂分布的场效应晶体管的V_（？）波动小于具有随机沟道掺杂的场效应晶体管。V_（？）<th> ...更多信息 具有有序掺杂剂的FET的平均电导率远低于具有随机掺杂剂分布的FET的平均电导率，即使两种FET的掺杂剂数量完全相同。碳<th>纳米管/纤维的位置控制精确控制单个CNF在衬底上的位置对于开辟新的器件应用是必不可少的。我们试图通过聚焦Ni离子注入和随后的等离子体化学气相沉积（CVD）来控制CNFs的生长位置。在30 kV下，Ni离子通过热生长的氧化膜注入n型Si（100）衬底。在去除热氧化物后，在天线边缘2450 MHz微波等离子体辅助CVD中，在600℃下，用纯度大于99.9999%的氢气和甲烷进行10 min的CNF生长。观察到CNFs在Ni注入位点上的选择性生长。这是第一次证实，注入镍离子作为催化剂的CNFs的合成。少

In order to develop potentialities of single ion implantation through die precise control of solid-state physical and chemical properties in nano-scale semiconductors by one-by-one implantation of dopant atoms, we demonstrated the control of the electrical characteristics in ultrafine semiconductor devices and the selective growth of carbon nanotubes/fibers at catalytic ion-implanted site as follows.Control of electrical properties in ultrafine semiconductor devicesThe influence of dopant atom position on V_<th> in silicon wire MOSFETs was experimentally investigated for the first time by means of SIX. P single-ions were implanted into n-type channel region at intervals of 100nm. V_<th> was evaluated and compared with that of conventional FETs in which the dopant atoms were randomly introduced. Our results indicate that V_<th> fluctuation of FETs with ordered dopant distribution was smaller than that of FETs with random channel doping. It was also found that the average value of V_<th> … More of FETs with the ordered dopants was much lower than that of FETs with the random distribution of dopants, even though the dopant number was exactly same for both FETs. This indicates that it is important to control the dopant position for the precise control of V_<th>.Position control of carbon nanotubes/fibersThe precise control of individual CNFs position on substrate is essential for opening up novel device applications. We attempted to control the growth position of CNFs by means of focused Ni ion implantation and the subsequent plasma chemical vapor deposition (CVD). Ni ions were implanted at 30kV into n-type Si(100) substrate through the thermally grown oxide film. After a removal of thermal oxide, an antenna edge 2450MHz microwave plasma assistant CVD was carried out at 600℃ for 10 min with pure hydrogen and methane over 99.9999% for the CNF growth. The selective growth of CNFs on Ni-implanted sites was observed. It was confirmed for the first time that the implanted Ni ions act as a catalyst for the synthesis of CNFs. Less