Low-temperature heteroepitaxy of compound semiconductors on silicon substrate

在本研究中，我们开发了利用层状化合物半导体在硅衬底上垂直于c轴生长薄膜晶体的工艺技术，并对电子现象进行了研究。半导体薄膜的外延研究通常是基于考虑蒸发材料与衬底材料之间的晶体配位，而基于玻璃衬底的晶体生长技术是光学和电子器件应用所需要的。在硅衬底和熔融二氧化硅衬底上成功地生长出了在可见光区具有光学带隙的III-VI族化合物半导体晶体薄膜。讨论了层状化合物半导体的低温晶体生长机理和范德华外延的工艺条件。研究结果如下：1)提出了在硅衬底上制备层状化合物半导体（GaSe, GaS…More）的低温晶体生长工艺，并在电子束沉积法和射频溅射法的基础上开发了该工艺的基础技术。2)采用电子束沉积法在垂直于c轴的硅衬底上获得了GaSe薄膜。当衬底温度为500℃时，GaSe薄膜的光能隙为2.0eV，对其光导性能非常敏感。3)通过本文提出的激发膜-表面电荷法薄膜生长工艺，我们对石墨外延在硅衬底上的晶体生长机理有了较好的认识。4)利用电子（能量）阵雨辅助工艺，在衬底温度低于300℃的条件下，在硅衬底上获得了沿c轴方向的晶体气体薄膜。最后，在电子束沉积法传统工艺的基础上，提出的工艺使GaSe和GaS晶体薄膜能够在较大的衬底面积上沉积，并确定了GaSe和GaS晶体薄膜适用于光传感器器件和智能器件。少

In this research, we have developed the process technology of the thin film crystal-growth perpendicular to c-axis on the silicon substrate using the layered compound semiconductors and investigated electronic phenomena. The epitaxial research of semiconductor films is usual based on considering the crystalline coordination between evaporation material and substrate material, but the crystal-growth technology based on the glass substrate is need for optical and electronic device applications. The crystalline thin films of III-VI family compound semiconductor have an optical-band-gap in visible-light region are successfully grown on the silicon substrate and fused silica substrate. And we also discussed about the low-temperature crystal-growth mechanism and the process condition of van der waals epitaxy for the layered compound semiconductors. These results are as follows :1) The low-temperature crystal-growth process have been proposed for the layered compound semiconductors (GaSe, GaS … More ) on the silicon substrate, and the base technologies of our process are developed using the conventional semiconductor process of the electron beam deposition method and RF-sputtering method.2) It is established that the GaSe thin film on the silicon substrate perpendicular c-axis is obtained by electron beam deposition method. The GaSe film as the substrate temperature is 500℃ have an optical energy gap of 2.0eV, and these samples are indicated highly sensitive to the photo conductive property.3) From the proposed film-growth process using the exciting film-surface charge method we are obtained a good knowledge for the crystal growth mechanism of the grapho-epitaxy on the silicon substrate.4) From the electron (energy) shower-assist process, the crystalline GaS films along c-axis are obtained at substrate temperature lower than 300℃ based on the silicon substrate.Finally, these proposed processes based on the conventional process of the electron beam deposition method are enabling technology to deposit on the large substrate area, and it is established that the GaSe and GaS crystalline films are applicable to the photo sensor device and the intelligent device. Less