GaInNAs vertical cavity surface emitting laser arrays for ultra-high speed and parallel data-links

未来的短距离光波网络和光局域网需要低成本、高性能的激光器。垂直腔面发射激光器（VCSEL）是一种重要的光源，波长为1.1 ~ 1.6μm的垂直腔面发射激光器适用于光纤系统。本研究旨在利用GaAs基材料实现光数据链路的长波VCSEL。作为GaAs基材料，采用CBE、MBE和MOCVD外延技术生长高应变GaInAs量子阱（QW）、GaInNAs量子阱、GaInNAs量子点（QD）和GaInAsSb量子点，实现了高发射效率和长波发射。通过对生长晶体的光致发光测量，可以观察到GaInAs QWs的发射光谱为1.1 ~ 1.2μm， GaInNAs QWs的发射光谱为1.2 ~ 1.4μm， GaInAsSb QDs的发射光谱为1.4 ~ 1.5μm。这些结果表明了GaAs基材料在长波长激光器中的适用性。研究还发现，GaInNAs量子点能有效地形成高密度的点，有利于提高激光特性。利用高应变GaInAs和GaInNAs量子阱生长和制备了边缘发射激光器，并分别在1.2μm和1.4μm处观察到激光。此外，利用高应变GaInAs量子阱制备了1.13μm波长的VCSEL。在高温下进行了VCSEL的工作，并进行了长距离高速传输实验。这些初始激光性能表明基于砷化镓的长波材料适用于高性能VCSELS。虽然无法实现1.2μm以上波长的VCSEL，但通过优化生长条件，提高晶体的发射效率，可以在GaAs上实现1.1 ~ 1.5μm的VCSEL。

Low cost and high performance lasers are required in next short distance lightwave networks and optical LANs. The vertical cavity surface emitting laser (VCSEL) is important light source and the VCSEL with 1.1-1.6μm of wavelength is suitable for the optical fiber systems. This research is aiming to realize the long wavelength VCSEL for optical data links using GaAs based material.As GaAs based materials, highly strained GaInAs quantum well (QW), GaInNAs QW, GaInNAs quantum dot (QD) and GaInAsSb QD are grown using CBE, MBE and MOCVD epitaxial techniques for realizing high emission efficiency and long wavelength emission. 1.1-1.2μm emission by GaInAs QWs, 1.2-1.4μm by GaInNAs QWs, and 1.4-1.5μm by GaInAsSb QDs were observed from photoluminescence measurement of grown crystals. These results indicate applicability of GaAs based material for long wavelength lasers. It was also found that GaInNAs QDs were effective in high-density dot formation which is advantageous for improving in the laser characteristics. The edge emitting lasers are grown and fabricated using highly strained GaInAs and GaInNAs QWs and the lasing at 1.2μm and 1.4μm, respectively were observed. In addition, a 1.13μm wavelength VCSEL was fabricated by highly strained GaInAs QWs. The VCSEL was operated under high temperature and the long-distance high-speed tr'ansmission experiment was demonstrated. These initial lasing performances suggest applicability of GaAs based long wavelength material to the high performance VCSELS. Although, the VCSEL beyond 1.2μm of wavelength is not realized, 1.1-1.5μm VCSELS on GaAs will be achieved by improving emission efficiency of crystals by optimization of growth conditions.