Semiconductor Photonic Devices based on Control of Carrier Energy Relaxation
Semiconductor Photonic Devices based on Control of Carrier Energy Relaxation
批准号:
21360165
负责人:
MIYAMOTO Tomoyuki
金额:
$11.48万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2009
资助国家:
日本
项目状态:
已结题
起止时间:
2009 至 2011
中文摘要
点击翻译按钮获取中文摘要
英文摘要
The objective of this study is to solve the bottleneck of the direct modulation bandwidth of semiconductor lasers by controlling the energy relaxation of the carrier. The study of quantum structure and device fabrication was carried out. To clarify the theoretical validity of the mechanism, the specific structure was proposed and the theoretical characteristics were investigated. Experimentally, prototype of the proposed laser was fabricated and the fundamental properties and the issues for high-speed operation of lasers were clarified.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
登录
查看更多内容
数値解析によるトンネル注入SOAの動作特性の解明
通过数值分析阐明隧道注入 SOA 的运行特性
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[Xu Li, S. Kishimoto, F. Nakamura, T. Mizutani, 反町幹夫]
通讯作者:
反町幹夫
Well-in-Well量子井戸レーザの製作と測定(I)
井中井量子阱激光器的制作与测量(一)
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[T.Idehara, K.Kosuga, La Agusu, I.Ogawa, H.Takahashi, M.E.Smith, R.Dupree, 比嘉康貴]
通讯作者:
比嘉康貴
Large Light Output Kink Characteristics of Tunnel Injection Quantum Well Lasers
隧道注入量子阱激光器的大光输出扭结特性
DOI:
10.1143/jjap.50.080205
发表时间:
2011
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Yasutaka Higa, Hiroshi Nakajima, Mikio Sorimachi, Tomoyuki Miyamoto]
通讯作者:
Tomoyuki Miyamoto
Well活性層レーザの製作とRIN特性の評価
阱有源层激光器的制作及RIN特性评估
DOI:
--
发表时间:
2011
期刊:
影响因子:
--
作者:
[T.Saito,Y.Tatematsu, T.Idehara, et al., 西野目卓弥]
通讯作者:
西野目卓弥
変形トンネル注入構造としてのWen-in-Well量子井戸構造の電子緩和解析
作为变形隧道注入结构的 Wen-in-Well 量子阱结构的电子弛豫分析
DOI:
--
发表时间:
2010
期刊:
影响因子:
--
作者:
[福島匡泰, 吉村武, 前田和弘, 芦田淳, 藤村紀文, 比嘉康貴]
通讯作者:
比嘉康貴
共 26 条
Formation technology on light and current fine structures in semiconductor photonic devices
-
批准号:25600111
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2013
-
负责人:MIYAMOTO Tomoyuki
-
依托单位:
Semiconductor lasers with carrier energy filter structure
-
批准号:18686031
-
项目类别:Grant-in-Aid for Young Scientists (A)
-
资助金额:$19.22万
-
财政年份:2006
-
负责人:MIYAMOTO Tomoyuki
-
依托单位:
GaInNAs vertical cavity surface emitting laser arrays for ultra-high speed and parallel data-links
-
批准号:13555091
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.77万
-
财政年份:2001
-
负责人:MIYAMOTO Tomoyuki
-
依托单位:
海外基金