PREPARATION OF THIN FILM LIGHT WAVEGUIDE CIRCUIT OF FLUORIDE GLASS BY PLASMA CVD AND ATMOSPHERIC PLASMA

1.一种电子回旋加速器等离子体增强化学气相沉积装置，是生产行星荧光玻璃薄膜的合适人选，已开发。ZnF_2-BaF_2薄膜是由ECR等离子体增强型CVD技术制成的CaF 2（111）薄膜。从Zn和Ba上开始的材料，即Zn（thd）_2和Ba（hfa）_2（tg）已使用，相应地。在另一只手上， Ar和NF_3气体被用作载体气体和氟化气体，尽管如此。ZnF_2-BaF_2薄膜沉积在单晶体CaF_2（111）沉积在各种沉积条件下的平板（等离子体功率、沉积率、沉积温度等）Amorphous thin films were obtained in compositions of F_2 alone and 60 F_2·40 BaF_2。一部反常的ZnF_2电影的合成是第一次。对于AlF_3-BaF_2系统，利用Al（aa）_3和Ba（tfa）_2（tg）中的b-二酮酯制备了非正性薄膜，作为各种CVD条件下的材料。As a result， amorphous thin films were obtained in compositions of AlF_3 alone，80 AlF_3·20 BaF_2 and 60 AlF_3·4 BaF_2。一部类似的AlF_3电影的合成也是第一次。对于GaF_3-BaF_2系统，利用Ga（aa）_3和Ba（tfa）_2（tg）的b-diketonates作为各种CVD条件下的材料进行准备。As a result， amorphous thin films were obtained in compositions of GaF_3 alone and 50 GaF_3·50 BaF_2。一部反常GaF_3电影的综合症也是第一次。在ZnF_2-BaF_2、AlF_3-BaF_2和GaF_3-BaF_2系统中，仿形薄膜在X射线衍射、红外吸收、原子力显微镜、厚度和反射指数中的表征。它已经开发出的ECR等离子增强型CVD技术，可应用于制备荧光系统的非典型薄膜。

1. An electron cyclotron plasma-enhanced chemical vapor deposition apparatus, which is suitable for producing planar fluoride glass films, was developed.2. ZnF_2-BaF_2 thin films were prepared on CaF2(111) substrates by an ECR plasma-enhanced CVD technique. As starting materials on Zn and Ba, β-diketonates of Zn(thd)_2 and Ba(hfa)_2(tg) were used, respectively. On the other hand, Ar and NF_3 gases were used as a carrier gas and a fluorinating gas, respectively. ZnF_2-BaF_2 thin films were deposited on substrates of single crystal CaF_2(111) plates under various deposition conditions (plasma power, deposition rate, substrate temperature, etc.) Amorphous thin films were obtained in compositions of ZnF_2 alone and 60ZnF_2・40BaF_2. The synthesis of an amorphous ZnF_2 film is the first time.3. For the AlF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Al(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of AlF_3 alone, 80AlF_3・20BaF_2 and 60AlF_3・4BaF_2. The synthesis of an amorphous AlF_3 film also is the first time.4. For the GaF_3-BaF_2 system the preparation of amorphous thin films were attempted using b-diketonates of Ga(aa)_3 and Ba(tfa)_2(tg) as starting materials under various CVD conditions. As a result, amorphous thin films were obtained in compositions of GaF_3 alone and 50GaF_3・50BaF_2. The synthesis of an amorpous GaF_3 film also is the first time.5. The amorphous thin films synthesized in the ZnF_2-BaF_2, AlF_3-BaF_2 and GaF_3-BaF_2 systems were characterized by means of thin-film X-ray diffraction, IR absorption, atomic force microscope, thickness and refractive index.6. It was proved that the developed ECR plasma-enhanced CVD technique is applicable in preparing amorphous thin films of fluoride systems.