Application to Nanotube Making Process of Neutral Loop Discharge Plasma Technique

近年来，随着半导体工艺中的最小半导体制造工艺线宽为0.1μm的超细加工技术的发展，晶片的大直径制造正在迅速推进。因此，需要能够在大面积上进行均匀处理的等离子体源。在此基础上，提出了中性环放电（Neutral Loop Discharge，NLD）等离子体.因为NLD等离子体可以动态地控制过去等离子体中的不可能等离子体，所以可以进行高效的工艺。然而，目前的研究还停留在从结构到刻蚀的阶段。本课题旨在将NLD等离子体的独特概念应用于碳纳米管（Carbon Nanotubes，CNT）的制备，开拓NLD等离子体的新领域，在实际的实验中，采用直流放电、ICP和NLD等离子体的等离子体增强化学气相沉积（Plasma Enhanced Chemical Vapor Deposition，PECVD）法进行了CNT的制备实验。结果，使用NLD等离子体的实验所制备的CNT变得最薄。此外，碳纳米管可以通过其他实验方法在低压下产生。

Recently, the big diameter making of the wafer is rapidly advanced with the ultrafine processing technology of 0.1μm in the minimum in recent semiconductor manufacturing process line width in the process of the semiconductor. Then, the plasma, source by which a uniform process in a large area can be done is requested. Then, the NLD (Neutral Loop Discharge) plasma was proposed. Because the NLD plasma can dynamically control impossible plasma in past plasma, a highly effective process can be done. However, it is a current state of being limited from the structure only to the etching field now. We have aimed to pioneer the NLD plasma to a new field by applying a peculiar concept of the NLD plasma to the CNT (Carbon Nanotubes) making.In the actual experiment, we did the CNT making experiment by the Plasma Enhanced Chemical Vapor Deposition (PECVD) law which uses the DC electrical discharge, ICP and NLD plasma. As a result, CNT made by the experiment which used the NLD plasma became the thinnest. Moreover, CNT was able to be generated from other experiment methods with low-pressure power.