Research about addition of catalyst function on SiC thin film

以聚碳硅烷（PCS）为陶瓷前驱体聚合物合成的碳化硅（SiC）薄膜具有优异的耐热性和耐腐蚀性，该涂层具有作为氢气分离过滤器的潜在用途。但目前的课题是如何提高其透气性和分离率。因此，我们研究了通过铂离子注入形成加氢裂化催化剂层和通过各种高能离子束传输形成纳米霍尔结构来控制SiC薄膜气体穿透性的可能性。在多孔氧化铝衬底上以交联的PCS薄膜为原料合成了SiC薄膜。通过x -射线衍射光谱和卢瑟福后向散射光谱分析，表明SiC薄膜具有含氧的无定形结构。与高温烧结的碳化硅陶瓷相比，低密度的非晶碳化硅结构在高能离子束的作用下使薄膜收缩，从而减少了非晶碳化硅中氢可以通过的纳米孔的数量。在注入铂离子制备加氢裂化催化剂层的情况下，氢气和氮气的渗透率进一步降低。认为这是由于铂离子注入使SiC薄膜的受限部分密度增大所致。

Silicon carbide (SiC) thin film synthesized from polycarbosilane (PCS) as a ceramic precursor polymer has a excellent heat-resistance and corrosion resistance, and the coating is potentially useful as a hydrogen gas separation filters. But a current subject is improvement of its gas permeability and separation ratio. So we investigated possibility of gas penetrability control of SiC film using the hydrocracking catalyst layer formation by platinum ion implantation and the formation of nano hall structure by transmission of the various kinds of high energy ion beam.SiC film was synthesized from cross linked PCS thin film on the porous alumina substrate. As a result of X-ray diffraction spectrometry and rutherford backscattering spectrometry, it became clear that the SiC thin film has the amorphous structure containing oxygen. The amorphous SiC structure with low density compared with SiC ceramics fired at high temperature, it shrank by ion beam with high energy enough for transmission the thin film, therefore the amount of nano hole in the amorphous SiC which hydrogen could pass was decreased. In the case of the platinum ion implantation to make hydrocracking catalyst layer, the permeability of the hydrogen and nitrogen gases had decreased further. It is thought that this reason is that the density of the limited part of the SiC thin film by the platinum ion implantation is increasing.