30mK-Ultra-High-Vacuum Scanning Tunneling Microscope with rotatable magnetic field vector
30mK-Ultra-High-Vacuum Scanning Tunneling Microscope with rotatable magnetic field vector
批准号:
500507880
负责人:
金额:
$0.0万
依托单位国家:
德国
项目类别:
Major Research Instrumentation
财政年份:
2022
资助国家:
德国
项目状态:
未结题
起止时间:
2021-12-31 至 --
中文摘要
Wuppertal大学打算购买用于扫描隧道显微镜(STM)和光谱学(STS)的高分辨率设备,用于研究新型量子材料的电子结构。该器件应该在30 mK的基础温度下工作,以便获得仅在非常低的温度下出现的基态,并实现约30 µeV的最高能量分辨率。对于样品和隧穿尖端的磁性操作,装置应配备矢量磁体,其允许在平行和垂直于样品表面的几特斯拉的样品磁通量密度下施加。此外,该设备应配备超高真空(UHV)系统,在该系统中可以制备无污染的样品和尖端。将样品和针尖从超高真空系统转移到扫描隧道显微镜必须在超高真空内。该设备包括一个被动和主动阻尼元件系统,用于将设备与实验室建筑的振动解耦。该设备的具体项目主要涉及非常规超导体和拓扑材料的研究。他们依赖于申请人在最近结束的ERC整合补助金中的初步工作。
英文摘要
A high-resolution device for scanning tunneling microscopy (STM) and spectroscopy (STS) is intended to be purchased at the University of Wuppertal for investigating the electronic structure of novel quantum materials. The device should perform at a base temperature of 30 mK in order to gain access to ground states which occur only at very low temperatures, and in order to achieve a highest possible energy resolution of about 30 µeV. For magnetic manipulation of the samples and the tunneling tips, the device should be equipped with a vector magnet which allows to apply at the sample magnetic flux densities of several Tesla both parallel and perpendicular to the sample's surface. Furthermore, the device should be equipped with an ultra-high-vacuum (UHV) system, in which samples and tips can be prepared without contamination. The transfer of samples and tips from the UHV system to the scanning tunneling microscope has to be possible within the UHV. The device includes a system of passive and active damping elements for decoupling the device from vibrations of the laboratory building.Specific projects with this device primarily concern the research on unconventional superconductors and topological materials. They rely on preliminary work of the applicant within a recently concluded ERC Consolidator Grant.
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国内基金
海外基金
磷脂酶Ultra特异性催化油脂体系中微量磷脂分子的调控机制研究
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批准号:31471690
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项目类别:面上项目
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资助金额:90.0万元
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批准年份:2014
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负责人:王永华
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依托单位:
适应纳米尺度CMOS集成电路DFM的ULTRA模型完善和偏差模拟技术研究
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批准号:60976066
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项目类别:面上项目
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资助金额:41.0万元
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批准年份:2009
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负责人:何进
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依托单位: