High-Resolution Raman-Atomic-Force-Microscopy

拉曼光谱是基于固体内部光的非弹性散射。研究薄膜的化学成分、机械应力、结晶度和晶体取向是一项重要的技术。在本提案中，我们申请资助高分辨率拉曼和原子力显微镜的组合。Tappertzhofen教授（德国多特蒙德大学微纳米电子学教授）的研究团队专注于半导体、多功能和新型低维材料的制造和改性。这些材料是用于信息技术、传感器系统、光子学和微纳米系统的新型微纳米电子器件的基石。高分辨率拉曼和原子力显微镜的组合将成为该小组研究基础设施的一个组成部分。该测量系统将结合二维拉曼光谱的高灵敏度（化学计量学、结晶度和界面应力）和原子力显微镜的超高横向分辨率。凭借其强大的分析能力，显微镜系统将能够开展具有挑战性和原创性的研究项目，针对基础和面向应用的方面。特别是，我们将使用这种高分辨率技术来研究记忆开关过渡金属氧化物的化学成分和结晶度，以用于神经形态应用。在另一个项目中，测量系统将用于分析相同横向位置的低维材料的缺陷和形貌。基于这些发现，我们将制作和研究新型的隧道场效应晶体管。结合用于调节可变温度和大气的专用样品室，将在现场研究多功能材料的物理化学现象。将特别注意薄膜中纳米离子氧化还原反应与环境气体的相互作用。这些材料在先进的纳米结构传感器技术中具有很高的应用潜力。该测量系统将由电气工程和信息技术、化学和生物化学工程部门的用户操作。因此，它将在跨部门的原创研究项目中发挥关键作用，并将使未来的跨学科协同作用成为可能。

Raman spectroscopy is based on inelastic scattering of light within solids. It is a power technique to investigate the chemical composition, mechanical stress as well as crystallinity and crystal-orientation of thin-films. In this proposal we apply for funding for a combined high-resolution Raman- and Atomic-Force-Microscope. Research of the group of Prof. Tappertzhofen (Chair for Micro- and Nanoelectronics, TU Dortmund University) is focused on fabrication and modification of semiconductor, multifunctional and novel low-dimensional materials. These materials are the building blocks for new micro- and nanoelectronic devices for application in information technology, sensor systems, photonics and micro- and nanosystems. The combined high-resolution Raman- and Atomic-Force-Microscope will be an integral part of the group’s research infrastructure. The proposed measurement system will combine the high sensitivity (stoichiometry, crystallinity and interface stress) of two-dimensional Raman spectroscopy with the ultra-high lateral resolution of Atomic-Force-Microscopy. With its powerful analytic capabilities, the microscope system will enable to carry out challenging and original research-projects targeting fundamental and application-oriented aspects. In particular, we will use this high-resolution technique to investigate the chemical composition and crystallinity of memristively switching transition-metal-oxides for neuromorphic applications. In another project, the measurement system will be used to analyze defects and the morphology of low-dimensional materials at the same lateral position. Based on these findings novel tunnel field effect transistors will be fabricated and investigated. In combination with a dedicated sample chamber for adjusting variable temperatures and atmospheres physico-chemical phenomena of multifunctional materials will be investigated in situ. Special attention will be paid to the interplay of nanoionic redox-reactions in thin-films with the ambient gas. These materials have a high application potential for advanced nano-structured sensor technology. The measurement system will be operated by users based in the electrical engineering and information technology, chemistry, and bio-chemical engineering departments. It will thus take a key role in original research projects across departments and will enable future interdisciplinary synergies.