Developing pinMOS towards dual channel electrical and optical memory

虽然存储器代表了迄今为止传统（硅基）电子系统的最大部分，但有机存储器的工作严重落后于OFFERS的研究工作。虽然提出了许多概念，但目前尚未就前进的道路达成共识。尽管这些存储器概念中的许多在本质上完全是电子的（即，它们都是通过电装置写入和读取的），但是除了实现读/写功能的纯电方式之外，一些应用将极大地受益于光学读和写的能力，例如类似于“条形码”的非接触式应用，需要在没有直接物理接触的情况下进行读和写的扫描器或“记住”曝光的光学传感器。有了这个提议，我们想详细研究并进一步开发我们最近开发的一种新的存储器结构。它可以被认为是传统的p-i-n二极管OLED结构和MOS电容器之间的交叉-在这里被称为pinMOS。在初步实验中，我们已经能够观察到一个独特的记忆窗口和记忆状态的电子阅读和写入。该技术相对于其他技术的一个重要优势还在于其在成熟的OLED制造技术中的基础以及由此产生的与OLED的容易集成，即OLED和存储器应该组合的所有此类场景。虽然最初的结果是非常有前途的-不仅由于简单的设备相比，闪存型浮栅器件结构，而且由于其高再现性，状态稳定性，并为多位存储能力的强烈迹象-该设备的存储质量需要进一步发展，这反过来又要求我们更好地了解设备的原理和物理。为此，需要更详细地研究pinMOS器件，并且需要优化其层结构和特性（例如掺杂浓度和层厚度）以改善存储器性能，即增加状态的扩展。另一个主要目标是将该器件开发成完全的电光存储器件。由于该器件包含p-i-n结，因此目前已经可以通过短暂的可见光发射来检测存储器状态之一。将其扩展到通过光的写入和擦除可以通过以下方式实现：1）用光捕获供体-受体结构代替本征器件层，以及2）用氧化物代替宽带隙有机材料。实现这一点将使我们能够展示第一个有机存储器设备，可以完全独立地访问和控制电气和光学。

Although memories represent by far the largest part of conventional (silicon-based) electronic systems, work on organic memories is severely lagging behind the research efforts regarding OFETs. While many concepts have been proposed, there is currently no consensus on the way forward. Although a lot of these memory concepts are entirely electronic in nature (i.e., they are both written to and read from by electrical means), some application would tremendously benefit from the ability to read and write optically in addition to the purely electrical way of achieving read/write functionality – for example contactless applications similar to “barcode”-scanners that require read and write without direct physical contact or optical sensors that “remember” light exposure. With this proposal we want to study in detail and further develop a novel memory structure that we recently developed. It can be thought of as a cross between a conventional p-i-n diode OLED structure and a MOS capacitor – dubbed as pinMOS in here. In preliminary experiments, we were already able to observe a distinct memory window and electrical reading and writing of memory states. One important advantage of this technology over others also lies in its foundation in well-established OLED fabrication techniques and the resulting easy integration with OLEDs, i.e. all such scenarios in which OLEDs and memory should be combined. While the initial results are highly promising – not only due to the simplicity of the device compared to FLASH-type floating gate device structures, but also due to its high reproducibility, state stability, and strong indications for a multibit storage capability– the memory qualities of this device need to be further developed which in turn requires us to better understand the device principle and physics. For this, the pinMOS device needs to be studied in much more detail, and its layer structure and properties such as doping concentrations and layer thicknesses need to be optimized for improved memory performance, i.e. increased spread of states. Another major goal is to develop this device into a fully electro-optical memory device. Due to the fact that the device contains a p-i-n junction, one of the memory states can currently already be detected by a brief visible light emission. Extending this to writing and erasing by light can be achieved by 1) replacing the intrinsic device layer with a light harvesting donor-acceptor structure and 2) substituting the oxide for a wide-band gap organic material. Achieving this will enable us to demonstrate the first organic memory device that can be fully yet independently accessed and controlled electrically and optically.