Study of the High Efficiency Silicon Solar Cells by Light-Induced Diffusim Technique.

通过旋涂、CVD和/或真空蒸发在晶片上沉积了杂质掺杂薄膜。在p型硅片上制备了正面掺磷薄膜和背面掺硼薄膜。为了制备BSF(&lt；n^+pp^+&gt；型)硅太阳电池，用卤素灯的非相干光辐射加热旋转沉积的硅片。与普通离子注入和/或杂质扩散相比，这种方法在快速热处理(几个二阶)方面的优势是秒。在这项研究中，提出了制备高效LID硅SOLER电池的最佳光诱导扩散(LID)条件。为了研究载流子和杂质的深度分布，进行了霍尔效应和SIMS测量。盖子的杂质扩散过程取决于加热温度和升温速率。多晶硅和GaAsP合金半导体也用作起始衬底。GaAsP太阳电池的转换效率约为10%(AM 1)。LID工艺也适用于半绝缘砷化镓的Te扩散。用电化学C-V剖面仪测量了载流子深度分布。

Impurity-doped films were deposited on to the wafers by spin-on, CVD and/or vacumm evaporation. Phosphorus-doped films for front surface and the boron-doped films for back surface on to the p-type silicon wafers. To fabricate the BSF ( <n^+pp^+> -type) silicon solar cells, spin-on deposited wafers were heated with incoherent light radiation from halogenlamps. The advantage of this method in the rapid-thermal-processing (several second order) comparing to the ordinary ion-implantation and/or the impurity diffusion processec. In this study, optimum light-induced-diffusion (LID) conditions for fabrication of high efficiency LID silicon soler cells have been developed. To examine the indepth profiles of carrier and impurity, Hall effects and SIMS measurements were performed. Impurity diffusion processes of LID are depend on the heating temperature and the heating rates. Polycrystalline silicon and the GaAsP alloy semiconductor are also used as for the starting substrates. Conversion efficiency of the GaAsP solar cells is about 10% (AM 1). LID processes are also applid to the Te diffusion for the SI-GaAs. Carrier indepth profiles were measured by the electrochemical C-V profiler.