Optically Active Silicon-Based Nanostructured III-V Compound Semiconductors (OASIS)

一种新型的硅基混合材料系统将被开发和研究，这可能会对未来在硅平台上集成电光有源器件产生巨大的影响。在一些初步的实验中，可以证明在无缺陷的硅单晶基质中实现III-V纳米团簇的完全包合是可能的。在本项目中，这种新型材料将通过分子束外延进一步开发，并通过形态(X射线衍射、原子力显微镜、扫描电子显微镜、扫描电子显微镜)和光电子学研究(低T发光、反射和激发光谱、光电流和循环伏安测量)进行研究。这项工作将得到理论的有力支持，包括远离热平衡的生长过程的模拟以及能带结构和能带偏移量的计算。第一次，通过将理论与光学和电学测量进行比较，将对光学、电学和形态特性有一个基本的理解。

A novel silicon-based hybrid material system will be developed and investigated, which may have in future a huge impact for the integration of electrooptically active devices on a silicon platform. In some preliminary experiments it could be proven that a full inclusion of III-V nanoclusters in a defect-free Si single crystal matrix is possible to realize. In this project this novel class of material will be further developed by molecular beam epitaxy and investigated by morphological (XRD, AFM, FIB-SEM, TEM) and optoelectronic studies (low-T PL, reflection and excitation spectroscopy, photocurrent and CV measurements). The work will be strongly supported by theory, which includes the simulation of growth processes far away from thermal equilibrium and the calculation of bandstructures and band offsets. For the first time, by comparing theory with optical and electrical measurements, a fundamental understanding of the optical, electrical and morphological properties will be developed.