Study on The Emission Mechanism of Rare Earth Ions in Semiconductors and Its Application

在这三年的研究中，我们在科研资助计划的帮助下，获得了最重要的成果，即首次成功地观测到了Er^<3+>离子4f壳层内跃迁产生的1.54 μ m的发射（^4I_<13/2>-> ^4I_<15/2>）离子注入InP。稀土离子在III-V族化合物半导体和Si半导体中的发光研究主要是利用电子和空穴的复合产生的能量转移机制进行的，这些电子和空穴是由光照（光致发光）或注入到pn结（LED）中产生的。问题是激光发射效率低，高温下的热猝灭，以及对精确的能量转移和非辐射跃迁机制的了解很少。我们发现InP中Er^<3+>离子的1.54 μ m发射特性（光谱和荧光强度）与InP中Er^<3+>离子的1.54 μ m发射特性（光谱和荧光强度）有关。 ...更多信息 强度的温度依赖性）在光致发光和碰撞激发之间本质上是不同的。我们对光致发光和碰撞激发的发射特性进行了详细的比较，为阐明稀土离子掺杂晶体半导体的发光机理做出了重要贡献。进行了以下研究。1)Er/InP的碰撞激发发射。3)分析了Er ~（3+）离子的激发和发射机制; 4）评价了Er ~（3+）离子的发射效率和碰撞截面，得出了InP中存在多种Er ~（3+）离子的发射中心，并且在光致发光和碰撞激发中激发的中心不同。不同中心的非辐射跃迁机制也不同。我们计划进一步研究发射机制，提高发射效率，挑战其他稀土离子在其他半导体（特别是Si）中的碰撞激发发射。少

The most important result that was found during this three year research done with a help of Grant-in-aid for Scientific Research is that we succeeded for the first time in observing the 1.54mum emission due to the 4f intrashell transition of Er^<3+> ions ( ^4I_<13/2>-> ^4I_<15/2>) which are doped in InP by ion implantation by means of a new excitation method, that is, electron impact excitation. Study on the emission of rare earth ions doped in III-V compound semiconductors and in Si semiconductor had been mostly carried out using the energy transfer mechanism from the recombination of electrons and holes which were generated by illumination (photoluminescence) or injected into a pn junction (LED). The problem was a low emission efficiency for lasing, thermal quenching at high temperatures, and little understanding of the precise energy transfer and non-radiative transition mechanisms. We have found that the 1.54 mum emission characteristics of the Er^<3+> ions in InP (spectrum and th … More e temperature dependence of the intensity) were different in essential between photoluminescence and impact excitation. We made a detailed comparison of the emission characteristics between photoluminescence and impact excitation, which made a great contribution to elucidating the emission mechanisms of rare earth ions doped in crystalline semiconductors. The following studies were carried. 1) Er-doping process into InP by means of ion implantation, 2) Impact excitation emission of Er/InP. 3) Analysis of excitation and emission mechanisms of Er ions, 4) Evaluation of emission efficiency and impact cross section.In conclusion, there are various Er3^+ emission centers in InP, and different centers are excited between photoluminescnce and impact excitation. the non-radiative transition mechanism is also different for different centers. We are planning to study further on the emission mechanism, improve the emission efficiency and challenge the impact excitation emission of other rare earth ions in other semiconductors (especially in Si). Less