Dynamics of the Er1.54μm emission of Er-dope SiO_2/Si ultrathin multilayer structures

Er掺杂SiO_2/Si超薄多层结构的Er1.54μm发射动力学

• 批准号: 12450008
• 负责人: KIMURA Tadamasa
• 金额: $ 4.61万
• 依托单位: The University of Electro-Communications
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450008/
• 关键词: Er doped Si; 1.54 μm luminescence; energy backflow; temperature quenching; Auger quenching; ultra thin multilayer struct; 1.54μm 発光

The objectives of this study is to make an Er/SiO_2/Si ultra thin multilayer structure and to measure the energy transfer between carriers in Si and Er as a function of the thickness of the oxide layer which separates carriers and Er, in order to make clear the physical meanings of the effect of the oxide interlayer for the strong Er-related 1.54 μm emission at room temperature and to obtain a design principle for room temperature 1.54 μm luminescent devices.First, the energy transfer from photocarriers generated in Si to Er^<3+> ions is measured from the photoluminescence intensity and fluorescent decay time of the 1.54 μm emission as a function of the thickness of the oxide interlayer. Next, the reduction of the decay time under the cw illumination due to Auger quenching is measured to estimate the energy backtransfer from Er^<3+> ions to photocarriers.It is found that, though both the energy transfer and backtransfer are decreased with increasing the oxide thickness, the latter is decreased much more rapidly. In addition, it is shown that the energy transfer between carriers and Er^<3+> ions is due to the exchange mechanism. In conclusion, a thin oxide layer of 〜 2nm thickness improves the temperature quenching (γ = I_<300K>/I_<20K> = 1/2 〜 1/3 ) and gives the strongest room temperature intensity of the Er-related 1.54 μm luminescence.

本研究的目的是制作Er/SiO_2/Si超薄多层结构，并测量Si和Er中载流子之间的能量传递随分离载流子和Er的氧化层厚度的变化，以明确氧化层对室温下与Er相关的1.54 μm强发射效应的影响的物理意义，并获得室温1.54 μm发光器件的设计原理。首先，通过1.54 μm发射的光致发光强度和荧光衰减时间作为氧化层厚度的函数，测量了Si中产生的光载流子到Er^<3+ b>离子的能量传递。接下来，测量了连续波照明下由于俄歇猝灭而减少的衰变时间，以估计从Er^<3+ b>离子到光载流子的能量回传。结果表明，随着氧化层厚度的增加，能量传递和反传递均有所减小，但反传递的减小速度更快。此外，还证明了载流子与Er^<3+>离子之间的能量转移是由于交换机制。综上所示，厚度为~ 2nm的薄氧化层改善了温度猝灭（γ = I_<300K>/I_<20K> = 1/2 ~ 1/3），并使er相关1.54 μm发光的室温强度最强。

项目成果

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