Fabrication of ErSiO self-organized superlattice thin films and evaluation of the 1.54μm optical waveguide amplification characteristics
Fabrication of ErSiO self-organized superlattice thin films and evaluation of the 1.54μm optical waveguide amplification characteristics
批准号:
15360005
负责人:
KIMURA Tadamasa
金额:
$5.63万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005
中文摘要
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英文摘要
This study deals with the ErSiO new materials with a self-organized superlattice structure and its possibility for the 1.54μm optical waveguide amplification.In the fiscal year 2003, fabrication of ErSiO new thin films were developed using MOMBE, nano-structured porous silicon and sol-gel methods. ErSiO crystalline materials could be successfully formed by every method. They all show crystalline structures characteristics of ErSiO superlattice and also sharp and fine-structured 1.54μm luminescence spectra at room temperature due to Stark splittings in the Er 4f-4f transitions.In the fiscal year 2004, developments of a new fabrication method and the process improvements for ErSiO films thicker than 100 nm were studied. Using these improved ErSiO thin films, the self-organization mechanisms of ErSiO superlattice, detailed crystalline structures, electrical properties, and the origins of the peculiar luminescence spectra and the short fluorescence lifetime were investigated. First, contro … More l of the ratio of Er, Si and O at 1:2:2.4, especially control of O, was found to be most important for the growth of ErSiO crystalline superlattices with their peculiar luminescence spectra and fast fluorescence lifetime. A laser ablation method was also attempted to obtained improved ErSiO superlattice at lower process temperature together with process improvements of sol-gel and MOMBE methods. ErSiO crystalline thin films were obtained at 900-1000℃, about 200℃ lower than before. Possibility of epitaxial growth on tilted Si(100) by MOMBE was shown.In the fiscal year 2005, origins of very fast fluorescence lifetimes, 10-20μs compared to several ms in Er-doped Si-related materials, were studied in detail. By varying the optical density in ErSiO thin films, it was found that the fast fluorescence lifetime was the radiative lifetime itself of ErSiO, which may be due to very uniform and strong crystalline fields on Er^<3+> ions. ErSiO optical waveguides were formed and the transmission properties and up-conversion characteristics were studied.In conclusion, ErSiO with the Er concentration higher than 10^<20>/cm^3 and the radiative lifetime of 10-20μs is a very promising materials for the stimulated emission and light amplification at 1.54μm. Less
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正木克明: "MOMBE法により作製したEr-Si-O混晶の特性評価"第64回応用物理学会学術講演会講演予稿集. No.3. 1310 (2003)
Katsuaki Masaki:“MOMBE法制备的Er-Si-O混合晶体的特性评价”第64届日本应用物理学会年会论文集第3.1310号(2003年)。
DOI:
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发表时间:
期刊:
影响因子:
--
作者:
[]
通讯作者:
DOI:
10.1016/s0022-2313(02)00648-8
发表时间:
2003-05
期刊:
Journal of Luminescence
影响因子:
3.6
作者:
[H. Isshiki;A. Polman;T. Kimura]
通讯作者:
H. Isshiki;A. Polman;T. Kimura
Preferential suppression of Auger energy backflow by separation of Er ions from carriers with a thin oxide interlayer in Er-doped porous silicon
通过掺铒多孔硅中薄氧化物夹层将铒离子与载流子分离来优先抑制俄歇能量回流
DOI:
--
发表时间:
2003
期刊:
Journal of Luminescence 102-103
影响因子:
--
作者:
[T.Kimura, H.Isshiki, T.Ishida, T.Shimizu, S.Ide, R.Saito, S.Yugo]
通讯作者:
S.Yugo
Erbium-silicon-oxide nano-crystalline waveguide formation based on nano-porous silicon
基于纳米多孔硅的铒硅氧化物纳米晶波导形成
DOI:
--
发表时间:
2005
期刊:
Optical Materials 27
影响因子:
--
作者:
[T.Kimura, K.Ueda, R.Saito, K.Masaki, H.Isshiki]
通讯作者:
H.Isshiki
Erbium-silicon-oxide nano-crystallinte waveguide formation based on nano-porous silicon
基于纳米多孔硅的铒硅氧化物纳米晶波导形成
DOI:
--
发表时间:
2005
期刊:
Optical Materials 27
影响因子:
--
作者:
[T.Kimura, K.Ueda, R.Saito, K.Masaki, H.Isshiki]
通讯作者:
H.Isshiki
共 22 条
Evaluation of energy migration between Er ions in the fluorescence process of ErYSiO silicate crystals.
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批准号:22560003
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$2.91万
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财政年份:2010
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负责人:KIMURA Tadamasa
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依托单位:
Research on methodological fundamentals of cyber ethnography
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批准号:19500210
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项目类别:Grant-in-Aid for Scientific Research (C)
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资助金额:$3.0万
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财政年份:2007
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负责人:KIMURA Tadamasa
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依托单位:
Characterization of ErSiO superlattice crystals and development of light emitting devices for silicon photonics
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批准号:19360005
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$5.91万
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财政年份:2007
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负责人:KIMURA Tadamasa
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依托单位:
Dynamics of the Er1.54μm emission of Er-dope SiO_2/Si ultrathin multilayer structures
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批准号:12450008
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.61万
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财政年份:2000
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负责人:KIMURA Tadamasa
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依托单位:
The mechanism for the 1.54 mum luminescence of erbiumdoped porous silicon and the method of attaining a high efficiency.
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批准号:07455135
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.16万
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财政年份:1995
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负责人:KIMURA Tadamasa
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依托单位:
Study on The Emission Mechanism of Rare Earth Ions in Semiconductors and Its Application
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批准号:01550240
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项目类别:Grant-in-Aid for General Scientific Research (C)
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资助金额:$1.73万
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财政年份:1989
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负责人:KIMURA Tadamasa
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依托单位:
国内基金
海外基金
功能有机配体新颖设计与有机金属超分子导向组装
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批准号:20772152
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项目类别:面上项目
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资助金额:28.0万元
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批准年份:2007
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负责人:于澍燕
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依托单位: