Study on the Vapor-Phase Electrodeposition Utilizing Low Temperature Plasma

采用低温等离子体作为导电流体，进行了气相电解。该工艺与其他气相电化学工艺的独特之处在于，在等离子体中放置一个与等离子体产生电路分离的直流偏置电路，并用于电沉积工艺。在Ag^+离子导电玻璃/等离子体界面上，采用气相电沉积工艺从发光放电等离子体中的I_2中电沉积Agl。采用50w的AF功率产生低温等离子体。施加150v直流偏压。通过双探头I-V特性估计辉光放电等离子体的电导率为10^<-1>-10^<-2> S cm^<-1>。SEM、EPMA、ESCA和x射线衍射测试证实了Agl薄膜是气相电沉积工艺沉积的。沉积的电流效率为65%。电流效率相对较低的两个可能原因是暴露在等离子体中对生长中的Agl膜进行蚀刻，以及通过生长中的Agl层进行电子传导。这种新的电化学体系将开辟电化学的新领域，不仅因为它有许多可能的应用，而且因为它对带电界面的理论认识具有重要意义。

Electrolysis in the vapor-phase has been carried out using low temperature plasma as the conductive fluid. This process is unique from other vapor-phase electrochemical processes in that a DC bias circuit, separate from the plasma generation circuit, is placed in the plasma, and is used for the electrodeposition processes.The vapor-phase electrodeposition process is demonstrated for the electrodeposition of Agl from I_2 from glow-discharge plasma at Ag^+ ion conductive glass/plasma interface. AF power of 50 W was applied to generate low temperature plasma. DC bias of 150 V was applied. Conductivity of the glow discharge plasma estimated by double probe I-V characteristics was 10^<-1>-10^<-2> S cm^<-1>. SEM, EPMA, ESCA and X-ray diffraction measurements confirmed the deposition by vapor-phase electrodeposition process of Agl film. The current efficiency for the deposition was 65%. Two possible reasons for relatively low current efficiency are etching of the growing Agl film by exposure to the plasma, and electronic conduction through the growing Agl layer.This new electrochemical system will open a new field in electrochemistry, not only because of its numerous probable applications, but also of its importance to the theoretical understanding of the electrified interface.