Rapid Growth of Diamond Film by Combustion Plasma Coupled Inductively with Radio Frequency Power

据报道，金刚石膜可以通过简单的CVD技术在大气环境中沉积，该CVD技术使用乙炔氧作为起始材料的燃烧火焰。在我们的实验中，射频电功率与燃烧火焰感应耦合以激发火焰作为等离子体，Mo、Cu或Ti衬底被放置在燃烧火焰下的水冷铜平台上，通过铜工作线圈提供射频电功率来激发燃烧火焰。在抛光后的Mo或Cu基体上，金刚石颗粒沉积在镜面上，但稀土粉末的作用使金刚石颗粒的形核密度和生长速度加快。在400 ℃下，用金刚石细颗粒在钼基体上划痕，可快速形成高质量的金刚石膜。C（在衬底的后侧），具有300 W RF功率（13.56MHz）。在几乎相同的条件下，在较低的衬底温度下，在Cu衬底上也可以形成高质量的金刚石膜。随着频率的升高（27.12MHz）或功率的增大，金刚石膜的质量下降。采用射频氮-乙炔等离子体碳氮共渗技术对钛基片进行碳氮共渗，可以加快金刚石颗粒和金刚石薄膜的生长速度。因此，这种预处理和射频燃烧火焰等离子体的组合必须是非常有效的快速生长金刚石在某些类型的衬底上。

It has been reported that diamond film can be deposited in the atmospheric ambient by a simple CVD technique using a combustion flame using acetyleneoxygen as starting materials. In our experiment, RF electric power was coupled with the combustion flame inductively to excite the flame as a plasma.Mo, Cu, or Ti substrate was placed on a water-cooled copper stage under the combustion flame which was excited with RF popwer supplied through a copper workcoil. Only diamond particles was deposited on the polished mirror surface of Mo or Cu substrate, but the nucleation density and the growth rate were accelerated with RE power impression. High quality diamond film was rapidly formed on Mo substrate scratched with fine diamond particles at 400。C (at the rear side of the substrate) with 300W RF power (13.56MHz). High quality diamond film was also formed on Cu substrate at almost same condition, but at lower substrate temperatures. The quality of diamond film was deteriorated with higher frequency (27.12 MHz) or higher power impression. The growth rates of diamond particles and diamond film were accelerated by using Ti substrate carbonitrided in RF nitrogen-acetylene plasma. Accordinly, a combination of such pretreatment and RF impression to combustion flame plasma must be very effective for rapid growth of diamond on some kinds of substrates.