Dotierung von Indiumsulfid und Indiumoxid mit Lithium

我们打算研究锂掺杂在两种in化合物In2S3和In2O3中的作用。锂掺杂In2S3是可充电锂电池的电极。另一方面，掺杂锡（ITO）的In2O3是最重要的光学透明导电薄膜。我们想研究li掺杂的In2O3和In2S3是否具有类似的有趣的材料性质。第一个核心兴趣是确定Li的最大掺入量和注入的外来原子Li的原子位置(s)，例如，可以大量插入尖晶石ß-In2S3。为了确定微观结构，我们将应用摄动角相关（PAC）技术。当使用放射性111In探针时，这两种化合物都是该技术的理想材料，这些探针将位于它们的“天然”阳离子晶格位置。放射性111In探针的注入和稳定的7Li的掺杂将在Göttingen的500 kV IONAS注入器中进行。此外，我们想用8Li的a-发射通道法来追踪li原子。用我所新安装的Pelletron加速器可以进行必要的7Li(d,p)8Li核反应。

We propose to investigate the role of Li-doping in the two In compounds In2S3 and In2O3. Li-doped In2S3 is of interest as electrode in rechargeable Li-batteries. In2O3 doped with tin (ITO), on the other hand, is the most important optical transparent, conductive film. We want to investigate whether Lidoped In2O3 and In2S3 have similarly interesting materials properties. The first central interest is to determine the maximum amount of incorporated Li and the atomic position(s) of the implanted foreign atom Li which can, for example, be intercalated with high amounts into the spinel ß-In2S3. To determine the microscopic structure we will apply the technique of perturbed angular correlations (PAC). Both compounds are ideal materials for this technique when using radioactive 111In probes, which will be located at their "natural" cation lattice sites. Implantation of the radioactive 111In probes and of stable 7Li for doping will be done at the 500 kV IONAS implanter at Göttingen. In addition we want to trace the Li-atoms by the method of a-emission channeling of 8Li. The necessary nuclear reaction 7Li(d,p)8Li can be done with the newly installed Pelletron accelerator of our institute.