Improvement of energy selecting electron microscope with atom resolution and detection of different kinds of atoms in materials.
Improvement of energy selecting electron microscope with atom resolution and detection of different kinds of atoms in materials.
批准号:
07455015
负责人:
HASHIMOTO Hatsujiro
金额:
$3.01万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996
中文摘要
为了用电子显微镜识别材料中的外来原子及其团簇,在原子分辨电子显微镜下制作能谱仪,选取受内壳激发的非弹性散射电子,重建成原子图像。由于具有内壳层激发的电子的强度比初级电子的强度小100-10,000倍,因此记录原子图像所需的曝光时间变为1分钟至1小时。如此长时间曝光的图像不可避免地会受到样本漂移的影响。为了补偿试样的漂移,采用压电元件采集图像运动并反馈到测角仪上试样的位移。在pc9801计算机上完成了漂移检测和驱动精度为0.02nm的测角仪的所有过程。在原子分辨率水平上,试样在长曝光时间内的漂移不是线性的,而最初制作的无漂移测角仪系统在驱动机制上是不够的。因此,对系统进行了重新设计和改造。正如预期的那样,通过348(]SY.+-,可以实现0.2nm的图像分辨率。[)利用Ca- l <@ d22,3 @>D2能量损失电子,在40-120秒曝光下,记录了200kV条件下含有Ca原子的高T<@D2c@>D2超导材料的3 eV能量损失电子。由于曝光时间不足以清晰地显示Ca原子的图像,一些图像处理应用于显示单、双、三Ca原子低,得到了合理的Ca原子图像。对能量损失约为100kV时非弹性散射的势局域化进行了新的理论计算。对钛合金的相变进行了观察。
英文摘要
In order to identify the foreign atoms and their clusters in the materials by using electron microscopes, the inelastically scattered electrons which have suffered from the inner shell excitation were selected by energy spectrometer fabricated under the atom resolution electron microscopes, and reconstructed to be the images of atoms. Since the intensity of electrons with inner shell excitation 100-10,000 times smaller than the one of primary electrons, the exposure time necessary for recording the atom images becomes to be one minute to one hour. The images with such long exposures inevitably suffer from the drift if the specimen. To compensate the specimen drift, image movement was picked up and feed back to the shift of the specimen on the goniometer with piezo electric element. All processes including detection of drift and driving the goniometer with an accuracy of 0.02nm were carried out using a computer of PC 9801.The drift of the specimen is not linear for a long exposure time at the atomic resolution level and the drift free goniometer system which was made at first was not sufficient in the driving mechanism. Thus the system was redesigned and reconstructed. Since it was expected, the image resolution of 0.2nm can be achieved by the 348(]SY.+-。[)3 eV energy loss electrons at 200kV,high T<@D2c@>D2 superconducting materials with Ca atoms were recorded using Ca-L<@D22,3@>D2 energy loss electrons with 40-120 sec exposures. Since the exposure time was not sufficient to reveal the images of Ca atoms clearly, some image processings have applied to reveal the single, double and triple Ca atom low and got reasonable Ca atom images.New theoretical calculation of the potential localization for inelastic scattering at about 100kV energy loss have been calculated. Observation on the phase transformation of Ti alloy were also carried out.
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M.Takeda: "Precipitation Behaviour of Cu‐Co Alloys" Phys.Stat.Sol.(a). 158. 39-46 (1996)
M.Takeda:“Cu-Co 合金的沉淀行为”Phys.Stat.Sol.(a) 158. 39-46 (1996)。
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M.Awaji, H.Hashimoto: "Detection of a Point Defect in a Silicon Single Crystal by a Subtration Method Using High Resolution Transmission Electron Microscopy" Acta Crystallograohica. A52. 158-170 (1996)
M.Awaji、H.Hashimoto:“使用高分辨率透射电子显微镜通过减法法检测硅单晶中的点缺陷”Acta Crystallograohica。
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Y.D.Yu, R.Guan, H.Hashimoto, Y.Makita: "Electron Microscope Study of the Structure of A_<g2>S Formed in the initial Stage of Silver Sulphide" Acta Crystallograohica. B51. 149-155 (1995)
Y.D.Yu,R.Guan,H.Hashimoto,Y.Makita:“硫化银初始阶段形成的A_<g2>S结构的电子显微镜研究”晶体学报。
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H.Hashimoto: "New Development of Imaging method of Atoms in Materials and its Characterization" J.Elec.Micros.Soc.Thailand. 11-1. 1-5 (1997)
H.Hashimoto:“材料中原子成像方法及其表征的新发展”J.Elec.Micros.Soc.Thailand。
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H.Hashimoto: "Fifty Years of Electron Microscopy and Materials Structure Research and Prospects for the Future" Electron Microscopy 1996, Proc APEM Conference, Hong Kong. 1. 21-24 (1996)
H.Hashimoto:“电子显微镜和材料结构研究五十年及未来展望”电子显微镜 1996 年,Proc APEM 会议,香港。
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共 40 条
RESEARCH AND APPLICATIONOD DIRECT OBSERVATION OF QUICK FLUCTUATION OF ATOM IMAGES BY ATOM RESOLUTION ELECTRON MICROSCOPES AND TV-IMAGEPROCESSING SYSTEM
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批准号:03452084
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$2.62万
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财政年份:1991
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负责人:HASHIMOTO Hatsujiro
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依托单位:
Research on behavior of lattice imperfection and phase transformation at low temperature by atom resolution analytical electron microscope
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批准号:63460061
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项目类别:Grant-in-Aid for General Scientific Research (B)
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资助金额:$3.84万
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财政年份:1988
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负责人:HASHIMOTO Hatsujiro
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依托单位:
海外基金