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MULTI-WAVELENGTH SURFACE EMITTING LASER ARRAY

MULTI-WAVELENGTH SURFACE EMITTING LASER ARRAY
多波长表面发射激光阵列
批准号:
07555013
负责人:
KOYAMA Fumio
金额:
$4.48万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1995
资助国家:
日本
项目状态:
已结题
起止时间:
1995 至 1996

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中文摘要
翻译
大规模集成的并行光器件在未来的并行光纤通信系统、光互连、并行光记录等方面的应用越来越重要。垂直腔面发射激光器(VCSELs)由于其低阈值和易于与光纤的光耦合而在光互连和高速并行光数据链路中引起了人们的广泛关注。在光互连中,二维阵列结构可以增加连接密度。此外,如果多波长VCSEL阵列可用于波分复用(WDM)互连,则可以期望具有波长路由等功能。VCSELs在波分复用系统中的一个潜在应用是多波长激光阵列。VCSELs的激光波长主要由腔体的长度、等效折射率和横向尺寸决定。其中,激光波长主要取决于腔体长度。例如,晶圆片上1%的层厚变化会在标称波长1nm的情况下产生10nm的相当大的波长变化。如果我们能够局部控制层厚度,我们可以形成多波长二维阵列,并补偿晶圆上激光波长的不均匀性。提出了一种非平面MBE生长方法,作为多波长VCSEL阵列层厚的局部控制方法。在这项工作中,我们提出了一种利用非平面金属有机化学气相沉积(MOCVD)在片上控制vcsel波长的新技术。制造过程与标准VCSELs相同,只是衬底在生长之前被图像化。通过改变圆形图案的尺寸,可以制备多波长VCSEL阵列。利用该技术制备了低阈值3*3多波长VCSEL阵列。该方法可用于实现具有极大波长跨度的多波长VCSEL阵列。此外,我们将能够补偿vcsel在大晶圆上的波长不均匀性。少
英文摘要
Massively integrated parallel optical devices are becoming important for use in future parallel optical fiber communication systems, optical interconnects, parallel optical recording and so on. Vertical cavity surface emitting lasers (VCSELs) have been attracting much interest for optical interconnects as well as for hihg speed parallel optical data links because of their low threshold and ease in optical coupling to fibers. A 2-D array configuration will increase the connection density in optical interconnects. In addition, if multi-wavelength VCSEL arrays are available for wavelength division multiplexing (WDM) interconnects, functionalities such as wavelength routing can be expected. A potential application of VCSELs for WDM systems is multi-wavelength laser arrays.The lasing wavelength of VCSELs is determined primarily by the length, the equivalent refractive index and the lateral size of the cavity. Among them, the lasing wavelength predominantly depends on the cavity length. For … More example, a 1% variation of layr thickness over a wafer produces a fairly large wavelength change of 10nm at a nominal wavelength of 1mum. If we are able to locally control the layr thickness, we can form multi-wavelength 2-D arrays as well as compensate for the nonuniformity of the lasing wavelength across the wafer. A nonplanar MBE growth is proposed as a way of local control of layr thickness for multi-wavelength VCSEL arrays.In this work, we present a novel technique of on-wafer wavelength control of VCSELs using nonplanar metalorganic chemical vapor deposition (MOCVD). The fabrication process is the same as that of standard VCSELs except that the substrates are patterned prior to the growth. Multi-wavelength VCSEL arrays can be fabricated by changing the size of the circular pattern. Low threshold 3*3 multi-wavelength VCSEL arrays were demonstrated by using this technique. The proposed method might be useful to realize muti-wavelength VCSEL arrays with an extremely large wavelength span. Also, we will be able to compensate for the wavelength nonuniformity of VCSELs across a large wafer by using this technique. Less
期刊论文(23)
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会议论文
Toshikazu Mukaihara 他: "Low‐threshold mesa etched vertical‐cavity InGaAs/GaAs surface‐emitting lasers grown by MOCVD" Electronics Letters. 31. 647-648 (1995)
Toshikazu Mukaihara 等人:“通过 MOCVD 生长的低阈值台面蚀刻垂直腔 InGaAs/GaAs 表面发射激光器”《电子快报》31. 647-648 (1995)。
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Yukio Hayashi 他: "Record low‐threshold index‐guided InGaAlAs vertical‐cavity surface‐emitting laser with a native oxide confinement structure" Electronics Letters. 31. 560-562 (1995)
Yukio Hayashi 等人:“记录具有天然氧化物限制结构的低阈值折射率引导 InGaAlAs 垂直腔表面发射激光器”《电子快报》31. 560-562 (1995)。
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T.Mukaihara 他: "Fabrication processes for low thresholod InGaAs vertical-cavity surface-emitting lasers" Physica B. 227. 400-403 (1996)
T. Mukaihara 等人:“低阈值 InGaAs 垂直腔表面发射激光器的制造工艺” Physica B. 227. 400-403 (1996)
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N.Hatori 他: "Characterization of Residual Stress in Active Region due to AlAs Native Oxide of Vertical-Cavity Surface-Emitting Lasers" Jpn. J. Appl. Phys.12A. 6108-6109 (1996)
N. Hatori 等人:“垂直腔表面发射激光器的 AlAs 天然氧化物引起的活性区域残余应力的表征”J. Appl. 6108-6109 (1996)。
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共 21 条
    New Functions of VCSEL Photonics
    • 批准号:
      19206012
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $30.45万
    • 财政年份:
      2007
    • 负责人:
      KOYAMA Fumio
    • 依托单位:
    Widely Tunable Hollow Optical Waveguides and Their Applications for Photonic Network Devices
    • 批准号:
      17068006
    • 项目类别:
      Grant-in-Aid for Scientific Research on Priority Areas
    • 资助金额:
      $60.48万
    • 财政年份:
      2005
    • 负责人:
      KOYAMA Fumio
    • 依托单位:
    Photonic Integrated Circuits for High Speed Photonic Networks-Challenges for Large Scale Photonic Integration-
    • 批准号:
      14GS0212
    • 项目类别:
      Grant-in-Aid for Creative Scientific Research
    • 资助金额:
      $355.85万
    • 财政年份:
      2002
    • 负责人:
      KOYAMA Fumio
    • 依托单位:
    FABRICATION OF MULTI-WAVELENGTH LIGHT SOURCES
    • 批准号:
      12450028
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $9.92万
    • 财政年份:
      2000
    • 负责人:
      KOYAMA Fumio
    • 依托单位:
    海外基金