HIGH SPEED MODULATIONS BY USING POLARIZATION SWITCHING OF MICROCAVITY SURFACE EMITTING LASERS
HIGH SPEED MODULATIONS BY USING POLARIZATION SWITCHING OF MICROCAVITY SURFACE EMITTING LASERS
批准号:
08455034
负责人:
KOYAMA Fumio
金额:
$4.86万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
1996
资助国家:
日本
项目状态:
已结题
起止时间:
1996 至 1997
中文摘要
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英文摘要
Massively integrated parallel optical devices are becoming important for use in future parallel optical fiber communication systems, optical interconnects, parallel optical recording and so on. Vertical cavity surface emitting lasers (VCSELs) have been attracting much interest for optical interconnects as well as for high speed parallel optical data links becouse of their low threshold and ease in optical coupling to fibers. The purpose of this study is to develop a novel technique of high speed modulation by using polarization switching of microcavity surface emitting lasers. The highlight of our results are in the following.1) We achieved the first demonstration of polarization control of VCSELs by using non- (100) substrates. Sub-milliamperes low threshold VCSELs grown on (311) A or (311) B substrates by either MOCVD or MBE were realized. The devices shows stable polarization operation with extinction ratio over 30dB under DC and high speed operations.2) We carried out the estimation of polarization selectivity of (311) -substrate VCSELs. Numerical simulation and experimental evaluation were carried out.3) We realized high speed operation of polarization controlled VCSELs beyond 10Gb/s.4) We fabricated and characterized quanrum wire structures by using the growth on patterned substrates. A few tens nm wide quantum wire structures were formed. The structure shows the anisotropy of PL characteristics, showing a potential of polarization control in VCSELs.5) We proposed a novel modulation scheme by using polarization switching in VCSELs with a potential of high speed modulation over 10Gb/s.
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N.Hatori et al.: "Design and fabrication of InGaAs/GaAs quantum wires for vertical-cavity surface-emitting lasers" Jpn.J.Appl.Phys.vol.35. 1777-1778 (1996)
N.Hatori 等人:“垂直腔表面发射激光器的 InGaAs/GaAs 量子线的设计和制造”Jpn.J.Appl.Phys.vol.35。
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M.Takahashi他: "Growth and characterization of VCSELs grown on(311)A-oriented GaAs substrates by molecular beam epitaxy" Jpn.J.Appl.Phys.35. 6102-6107 (1996)
M. Takahashi 等人:“通过分子束外延在 (311)A 取向 GaAs 基板上生长的 VCSEL 的生长和表征”Jpn.J.Appl.Phys.35 (1996)。
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M.Takahashi他: "AnInGaAS/GaAS Vertical Cavity Surface Emitting Laser Grown on GaAs(311)A Substrate Having Low Threshold and Stable Polarization" IEEE Photon.Tech.Lett.8. 737-739 (1996)
M. Takahashi 等人:“在具有低阈值和稳定偏振的 GaAs(311)A 衬底上生长的 AnInGaAS/GaAS 垂直腔表面发射激光器”IEEE Photon.Tech.Lett.8 (1996)。
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S.Sekiguchi 他: "Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminium and tertiarybutyl-arsine" Jpn.J.Appl.Phys.36・5A. 2638-2639 (1997)
S. Sekiguchi 等人:“使用三甲基铝和叔丁基胂通过金属有机化学气相沉积法将碳自动掺杂到 AlAs”Jpn.J.Appl.Phys.36·5A (1997)。
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M.Takahashi 他: "Lasing characteristics of GaAs (311) A substrate based InGaAs/GaAs vertical-cavity surface-emitting lasers" IEEEJ.Select.Top.Quantum.Electron.3・2. 372-378 (1997)
M. Takahashi 等人:“GaAs (311) 基底的 InGaAs/GaAs 垂直腔表面发射激光器的激光特性”IEEEJ.Select.Top.Quantum.Electron.3・2 (1997)。
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共 18 条
New Functions of VCSEL Photonics
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批准号:19206012
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$30.45万
-
财政年份:2007
-
负责人:KOYAMA Fumio
-
依托单位:
Widely Tunable Hollow Optical Waveguides and Their Applications for Photonic Network Devices
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批准号:17068006
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$60.48万
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财政年份:2005
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负责人:KOYAMA Fumio
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依托单位:
Photonic Integrated Circuits for High Speed Photonic Networks-Challenges for Large Scale Photonic Integration-
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批准号:14GS0212
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项目类别:Grant-in-Aid for Creative Scientific Research
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资助金额:$355.85万
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财政年份:2002
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负责人:KOYAMA Fumio
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依托单位:
FABRICATION OF MULTI-WAVELENGTH LIGHT SOURCES
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批准号:12450028
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.92万
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财政年份:2000
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负责人:KOYAMA Fumio
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依托单位:
FABRICATION OF MULTI-WAVELENGTHLIGHT SOURCES
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批准号:11555011
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项目类别:Grant-in-Aid for Scientific Research (B).
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资助金额:$4.42万
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财政年份:1999
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负责人:KOYAMA Fumio
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依托单位:
MULTI-WAVELENGTH SURFACE EMITTING LASER ARRAY
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批准号:07555013
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.48万
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财政年份:1995
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负责人:KOYAMA Fumio
-
依托单位:
海外基金