FABRICATION OF MULTI-WAVELENGTH LIGHT SOURCES

多波长光源的制造

• 批准号: 12450028
• 负责人: KOYAMA Fumio
• 金额: $ 9.92万
• 依托单位: Tokyo Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2000
• 资助国家: 日本
• 起止时间: 2000 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12450028/
• 关键词: SEMICONDUCTOR LASER; SURFACE EMITTING LASER; OPTICAL DATA STORAGE; OPTICAL NEAR FIELD; 光メモリ

An ultra-high density optical memory using optical near field is attracting much interest for future Tera byte optical data storage. Various optical near field sources have been reported. A common important issue of near field optical sources is to realize high output power density for recording data. Goto proposed a Tera byte optical memory system using a vertical cavity surface emitting laser (VCSEL) array. This optical memory system is based on an optical head consisting of a two-dimensional VCSEL array with low total power consumption.We have proposed a micro-aperture vertical cavity surface emitting laser (VCSEL) for use in near field optical data storage. We carried out the near-field analysis of micro-aperture VCSEL using 2-dimensional finite element method. We calculated the distribution of optical near field generated near a micro-aperture, and showed that the spot size is potentially smaller than 100 nm, which is less than wavelength by a factor of 8. We fabricated a VCSEL loaded by a Au film on the top surface for blocking the emitting light and formed a sub-wavelength size aperture using focused ion beam (FIB) etch through this film. Single mode operation was obtained for a micro-aperture VCSEL with 3 μm square active region. The differential quantum efficiency was increased by a factor of 3 in comparison with that before forming a 400 nm square aperture. We estimated the power density of light radiated from a 400 nm square aperture to be 0.17 mW/ m2. In addition, we measured the near field distribution of a 200 nm square VCSEL by using a scanning near field microscope.In addition, We propose the use of a micro-aperture surface emitting laser (VCSEL) for near-field optical probing. We present the first demonstration of two-dimensional imaging by using the voltage change signal from a micro-aperture VCSEL induced by the interaction with a probe.

利用光近场效应的超高密度光存储器是未来Tera字节光存储的一个热点。已经报道了各种光学近场源。近场光源的一个共同的重要问题是实现用于记录数据的高输出功率密度。后藤提出了一种使用垂直腔面发射激光器（VCSEL）阵列的Tera字节光存储系统。这种光存储系统是基于一个由低功耗的二维VCSEL阵列组成的光学头，我们提出了一种用于近场光存储的微孔径垂直腔面发射激光器（VCSEL）。采用二维有限元法对微口径VCSEL进行了近场分析。我们计算了在微孔径附近产生的光学近场的分布，并表明光斑尺寸可能小于100 nm，这是小于波长的8倍。我们制作了一个垂直腔面发射激光器的顶部表面上的Au膜加载，用于阻止发射光，并形成了一个亚波长尺寸的孔径使用聚焦离子束（FIB）蚀刻通过这个膜。在3 μm正方形有源区的微口径VCSEL上实现了单模工作。与形成400 nm方形孔之前相比，微分量子效率增加了3倍。我们估计从400 nm正方形孔径辐射的光的功率密度为0.17 mW/ m2。此外，我们还利用扫描近场显微镜测量了200 nm方形VCSEL的近场分布。此外，我们还提出了利用微孔径面发射激光器（VCSEL）进行近场光学探测的方法。我们提出了第一个演示的二维成像通过使用的电压变化信号从微孔径VCSEL与探针的相互作用引起的。

项目成果

S.Shinada, F.Koyama, N.Nishiyama, M.Arai, K.Iga: "Analysis and fabrication of micro-aperture GaAs/GaAIAs surface emitting laser for near field optical data storage"IEEE J. Select. Top. Quantum Electron. Vol.7, no.2. 365-370 (2001)

S.Shinada、F.Koyama、N.Nishiyama、M.Arai、K.Iga：“用于近场光学数据存储的微孔径 GaAs/GaAIAs 表面发射激光器的分析和制造”IEEE J. Select。

M.Arai, N.Nishiyama, M.Azuchi, S.Shinada, A.Matsutani, F.Koyama, K.Iga: "GalnAs/GaAs single mode vertical cavity surface emitting laser (VCSEL) array on GaAs (311)B"Trans. IEICE. vol.E84-C, no.3. 331-338 (2001)

M.Arai、N.Nishiyama、M.Azuchi、S.Shinada、A.Matsutani、F.Koyama、K.Iga：“GaAs (311)B 上的 GalnAs/GaAs 单模垂直腔表面发射激光器 (VCSEL) 阵列”

武内 健一郎, 松谷 晃宏, 小山 二三夫, 伊賀 健一: "GaAs/GaAlAs系面発光レーザにおけるAlAs選択酸化プロセスの改良と単一モード発振特性"電子情報通信学会論文誌. vol.J83-C, no.9. 904-907 (2000)

Kenichiro Takeuchi、Akihiro Matsutani、Fumio Koyama、Kenichi Iga：“GaAs/GaAlAs 表面发射激光器中 AlAs 选择性氧化过程和单模振荡特性的改进” IEICE Transactions，第 J83-C 卷，第 9 .904-907 号（ 2000)

武内健一郎,松谷晃宏,小山二三夫,伊賀健一: "GaAs/GaAlAs系面発光レーザにおけるAlAs選択酸化プロセスの改良と単一モード発振特性"電子情報通信学会論文誌. J83-C.9. 904-907 (2000)

Kenichiro Takeuchi、Akihiro Matsutani、Fumio Koyama、Kenichi Iga：“GaAs/GaAlAs 表面发射激光器中 AlAs 选择性氧化过程和单模振荡特性的改进”IEICE Transactions J83-C.9 (2000)。

品田 聡, 小山 一夫, 西山 伸彦, 荒井 昌和: "微小共振器面発光レーザによる近接場光生成"電子情報通信学会論文誌. vol.J83-C, no.9. 826-833 (2000)

Satoshi Shinada、Kazuo Koyama、Nobuhiko Nishiyama、Masakazu Arai：“微腔表面发射激光器产生近场光”IEICE Transactions vol.J83-C，第 9 期（2000 年）。