Trial Manufacturing of Integrated Type Optical Amplifiers Using Dielectric Crystal Thin Films

1. 参考射频溅射法制备Nd掺杂石榴石晶体薄膜的工艺条件，在YAG或GGG单晶衬底上制备了Er或Pr掺杂不同类型的石榴石晶体薄膜。定量分析和x射线衍射分析表明制备的薄膜具有良好的光学和晶体质量。石榴石晶体薄膜中Er离子的光谱测量。通过对吸收光谱和荧光光谱的详细测量，确定了最佳工作波长。吸收峰分别位于966nm和1467nm处，具有较高的抽运效率。测量薄膜在1.55 nm区域的荧光光谱，得到最佳放大波长，峰位于1530nm处。在实验确定参数的基础上，对掺铒石榴石晶体薄膜的瞬态响应放大特性进行了数值分析。利用长脉冲输入信号对放大器的慢动态特性进行了研究。该放大器适用于纳米和亚纳米秒脉冲的放大。飞秒脉冲持续时间的进一步放大分析正在进行中。为了制备更好的掺铒石榴石晶体薄膜，我们搭建了LPE装置，分别选用GGG和YIG作为衬底材料和薄膜主体材料。建立了衬底旋转、温度等加工条件的计算机控制。活性离子掺杂晶体薄膜的实际制备正在进行中。

1. Fabrication and optical characteristics analysis of rate earth doped garnet filmsReferring to the fabrication conditions of Nd doped garnet crystal thin films using RF sputtering, we fabricated Er or Pr doped different garnet crystal thin films on YAG or GGG single crystal substrates. The quantitative and x-ray diffraction analyzes reveal good optical and crystalline quality of the fabricated films.2. Spectroscopic measurements of Er ions in garnet crystal thin films.Optimum wavelengths of operation were decided by detailed measurement of absorption and fluorescence spectra. The absorption peaks, which provide high pumping efficiency, were located at 966nm and 1467nm, respectively. The fluorescence spectrum in the 1.55mum region of the film was measured to obtain the best amplification wavelength, and the peak was located at 1530nm.3. Transient response amplification studies using Er doped garnet crystal thin filmsBased on experimentally determined parameters, we analyzed numerically the amplification characteristics. The slow dynamics of the amplifier were explored using long input signal pulses. The proposed amplifier is found to be suitable for amplification of nano and sub-nano second pulses. Further analysis of amplification in the femto-second pulse duration is under progress.4. Fabrication of Er doped garnet crystal thin films using LPEIn order to fabricate better crystal thin films, we set up LPE apparatus, and selected GGG and YIG as substrate material and film host material, respectively. Computer control of the fabrication conditions such as substrate rotation, temperature, etc.was set up. The actual fabrication of active ion doped crystal films is in progress.