Study of Film Growth Mechanism and Development of Coaxial Line Type MPCVD System with Longitudinal Magnetic Field

在同轴线型微波等离子体制备系统中，施加平行于微波电场的直流磁场，抑制等离子体向放电管壁的扩散，从而实现放电稳定和高电子密度的目的。此外，[2]通过连接不同时进入直流磁场和微波功率的膜沉积室，在低温稳定的等离子体中进行CVD，产生不提供微波功率的空间后生等离子体。1995年，我们利用相对容易放电的氩气或氮气气体，主要进行了放电实验，阐明了在常规无磁场系统中，虽然放电不稳定，电子密度下降，但可以得到在低气压和高电子密度下稳定的等离子体。此外，对较难放电的H_2气体进行了同样的实验，消除了对H_2气体可以获得稳定的高电子密度等离子体的期望，从而完成了最初的目的[1]。1996年进行了以薄膜沉积为主的实验，明确了在氩气和氮气气的作用下，与无磁场条件下相比，在不发生薄膜劣化的情况下，可以得到更高的薄膜沉积。在H_2气体中，在1400高斯左右的磁场作用下，得到了稳定的高电子密度等离子体，并在7 */s的速度下进行了薄膜的高速沉积，但在H_2气体压力下，由于电子密度没有磁场，沉积a- si: H薄膜的速度很低，从而完成了[1]和[2]的目的。

The purposes of this study are [1] to plan discharge stabilization and high concentration of the electron density because of depressing diffusion of plasma toward the discharge tube wall by applying a D.C.magnetic field parallel to the electric field of microwave in the coaxial-line type microwave plasma fabrication system, moreover [2] to perform CVD in low temperature and stable plasma by connecting a film deposition chamber which is designed not to enter both D.C.magnetic field and microwave power in the film deposition chamber and to generate spatial after-grow plasma which is not supplied microwave power.In the year of 1995, using Ar gas or N_2 gas which is relatively easy to discharge, mainly we have executed discharge experiments, and it was clarified that plasma which is stable under low gas pressure and high electron density is obtained though discharge is nustable and the electron density decreases in conventional no magnetic field system. Moreover, the same experiment for H_2 gas which is relatively difficult to discharge was executed, and the expectation that stable and high electron density plasma can be obtained for H_2 gas was cleared, then the initial purpose [1] was completed.In the year 1996, the experiments were executed with notice for mainly film deposition, it was clarified that higher film deposition was performed without deterioration of films compared with the case of no magnetic field when Ar gas or N_2 gas was used. Moreover, when H_2 gas was used it was clarified that stable and high electron density plasma was obtained by application of the magnetic field of about 1400 Gauss and high speed film deposition was performed at 7 */s though a deposition the of a-Si : H film was very low for H_2 gas pressure because the electron density is in no magnetic field, then the purposes [1] and [2] were completed.