A new approach to the device processing by means of supersonic molecular and radical beams

我们的目的是研究(1):Cl_2离解反应和(2):H诱导的H在Si（100）表面吸附反应的动力学。在这个项目中，我们发现超声速Cl_2和原子氢光束对于硅器件的加工，如蚀刻和表面清洗，都是非常有用的和潜在的高。我们得到了以下结果：(1): Cl_2对Si（100）的解离反应。测定了Cl_2在Si（100）表面的初始粘附概率与表面温度和入射能量的关系。确定了两个粘接通道；一个是前体介导过程，另一个是直接粘附过程。前者在0.05eV以下的低入射能量下占优势，后者在0.1eV以上的高入射能量下占优势。用动力学模型对数据进行了分析，确定了相应的反应电位参数。(2)：化学吸附H在Si（100）上的吸氢反应生成HD的角分布。为了研究入射- d原子对化学吸附H的吸氢反应动力学，测量了产物HD分子的角分布。结果表明，相对于表面法线，在反射方向上，分布峰出现在20‰左右。与氢的缔合热脱附相比较，氢的热脱附峰向表面法向方向分布。因此，我们认为h诱导的抽离反应遵循eley - ideal机制。

Our aim of the project is to investigate the dynamics of the reactions of (1) : Cl_2 dissociatve reaction and (2) : H-induced H abstraction reaction on the Si (100) surface. In this project, we found that the supersonic Cl_2 and atomic hydrogen beams are both very useful and potentially high for the Si device processing such as etching and cleaning of surfaces. We obtained following results ;(1) : Cl_2 dissociatve reaction on the Si (100).Initial sticking probabilities of Cl_2 on the Si (100) surface were measured as a function of surface temperature and incident energy. Two sticking channels were clalified ; one is the precursor mediated process and the other is the direct stickiig process. The former process is dominat it low incident energy below 0.05eV,and the latter is at high incident energy above 0.1eV.The data were analyzed with a kinetic model, and the relevant reaction potential parameters were determined.(2) : Angular distribution of HD produced in the H abstraction reaction of chemisorbed H on Si (100)In order to investigate the abstraction reaction dyanamics of chemisorbed H by incident-D atoms, the angular distribution of products HD moleculeres were measured. It was found that the distribution peak appeared around 20ﾟ in the specular dirction with respect to the surafce normal. This was compared with the associative thermal desorption of hydrogen which showed the angualr distribution peak towards the surface normal. Therefore, we concluded that the H-induced abstarction reaction takes place following the Eley-Rideal mechanism.