Development of Cryogenic Electronics for High Sensitivity Sensors

红外天文卫星和X射线天文卫星为了实现高灵敏度和高能量分辨率，通常采用2K以下的低温冷却技术。这些应用要求在低温部分安装前置放大器、多路复用器，甚至A/D转换器，以实现大型天文卫星的最大性能。然而，标准的电子设备只能在-50摄氏度以上工作，并且还没有开发出可在2开尔文下工作的设备。本研究的目的是利用金氧半场效电晶体来发展低温前置放大器、多工器及类比数位转换器。作为这项研究的结果，我们已经发明了一种新的MOSFET结构，可在2开尔文。这是第一个使用商业硅片的结果。接下来，我们制作了一个2开尔文的运算放大器，以及用于远红外阵列传感器的60通道阵列放大器。这项研究的最终产品用于日本第一颗红外天文卫星的远红外阵列传感器。

In order to achieve high sensitivity and high-energy resolution for infrared astronomical satellites as well as X-ray astronomical satellites, cryogenic cooling technique of sensors at 2 Kelvin or below is often employed. For these applications, it is highly required to install preamplifiers, multiplexers, and even A/D converters in the low temperature part so as to realize the maximum performance of large-scale astronomical satellites. However, standard electronics devices can operate only above -50 degrees C, and no devices operable at 2 Kelvin has been developed. The purpose of this research is to develop cryogenic preamplifiers, multiplexers, and A/D converters by using MOSFETs. As the result of this research, we have invented a new MOSFET structure that is operable at 2 Kelvin. This is the first result by using commercial silicon wafers. Next, we have made an operational amplifier at 2 Kelvin, as well as 60-channel preamplifier array for far-infrared array sensors. The final product of this research is used for the far-infrared array sensors of the first infrared astronomical satellite of Japan.