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Formation of Surfaces and Interfaces Designed at Atomic/Molecular Level

Formation of Surfaces and Interfaces Designed at Atomic/Molecular Level
原子/分子水平设计的表面和界面的形成
批准号:
12305055
负责人:
ITAYA Kingo
金额:
$23.94万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2000
资助国家:
日本
项目状态:
已结题
起止时间:
2000 至 2001

项目摘要

项目成果

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中文摘要
翻译
了解发生在电极表面的现象,如金属的沉积和有机分子的吸附,对于包括器件开发在内的工业应用至关重要。我们在2001财政年度取得了以下成果。1)溶液中Cu在Pd(111)上的欠电位沉积(UPD)和体相沉积:在一步UPD和体相沉积过程中,Pd和Cu表面始终存在硫酸根离子。2)溶液中蒽在Ag单晶表面的吸附层结构:蒽分别吸附在Ag(111),Ag(100),Ag(110)表面,吸附层结构分别为(2[square root]3 × 2[square root]3)R30°,c(4 × 6),c(4 × 4)。3)碱性溶液中CN在Ir(111)上的吸附层:CN的吸附层结构为(2[square root]3 × 2[square root]3)R30°结构,由CN的六元环单元组成,Na^+在环中发生络合作用。4)溶液中晕苯在Au(111)表面的吸附:苯溶液中,通过浸渍Au(111)基底,在基底上形成高度有序的(4 × 4)对称的晕苯吸附层。5)Br在Ag(100)表面的吸附层结构和AgBr在Ag(100)表面的形成:Br在Ag(100)表面形成c(2x2)晶格,AgBr层在其上外延生长。6)超高真空下Rh(111)表面对二甲苯吸附层的形成过程对二甲苯吸附层在Rh(111)表面逐渐生长,形成一个C(4 × 2[平方根]3)矩形结构,以前发现它在溶液中形成。如上所述,我们成功地在液体和真空环境中以原子水平改性了金属表面和界面,优化诸如电极电势和蒸气压的参数。
英文摘要
Understanding the phenomena that occur on electrode surfaces such as deposition of metals and adsorption of organic molecules is essential to the industrial applications including the development of devices. We obtained the following results in the fiscal year 2001. 1) Underpotential deposition (UPD) and bulk deposition of Cu onto Pd(111) in solution : during the UPD that occurred in one step and the bulk deposition, sulfate ions always existed on Pd and Cu surfaces. 2) Adlayer structures of anthracene on Ag single-crystal surfaces in solution : anthracene were adsorbed on Ag(111), Ag(100), Ag(110) surfaces, and the adlayer structures were assigned as (2【square root】3 x 2【square root】3)R30°, c(4 x 6), and c(4 x 4), respectively. 3) Adlayers of CN on Ir(111) in alkaline solution : the adlayer structure of CN forming a (2【square root】3 x 2【square root】3)R30° structure were found to consist of units of 6-membered rings of CN, and the complexation of Na^+ took place in the rings. 4) Adlayers of coronene on Au(111) surface in solution : the adlayer of coronene was formed in benzene solution by immersing a Au(111) substrate, on which a highly ordered adlayer of coronene was formed in a (4 x 4) symmetry. 5) Adlayer structure of Br on Ag(100) surface and the formation of AgBr on Ag(100) : Br on Ag(100) formed a c(2 x 2) lattice, on which AgBr layers were epitaxially grown. 6) Formation processes of a p-xylene adlayer on Rh(111) surface in UHV : the adlayer of p-xylene grew gradually on Rh(111) surface to form a c(4 x 2【square root】3)rect structure, which was previously found to be formed in solution.As described above, we successfully modified metal surfaces and interfaces with an atomic level both in liquid and in vacuum environments, optimizing parameters such as an electrode potential and a vapor pressure.
期刊论文(30)
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会议论文
M.Hara, S.Yoshimoto, J.Inukai, K.Itaya: "In Situ STM Study of Cyanide Adlayer on Ir(111) in Alkaline Solution"Electrochemistry. 69. 934-936 (2001)
M.Hara、S.Yoshimoto、J.Inukai、K.Itaya:“碱性溶液中 Ir(111) 上氰化物吸附层的原位 STM 研究”电化学。
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通讯作者:
K.Itaya: "Encyclopedia of Surface and Colloid Science"Marcel Dekker, Inc. (in press). (2002)
K.Itaya:“表面和胶体科学百科全书”Marcel Dekker, Inc.(印刷中)。
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K.Suto,M.Wakisaka,M.Yamagishi,L.-J.Wan,J.Inukai,K.Itaya: "Highly Ordered p-Xylene Adlayer Formed on Rh (111) in HH Solution : In Situ STM and Ex Situ LEED"Langmuir. 16・24. 9368-9373 (2000)
K.Suto,M.Wakisaka,M.Yamagishi,L.-J.Wan,J.Inukai,K.Itaya:“HH 溶液中 Rh (111) 上形成的高度有序的对二甲苯吸附层:原位 STM 和异位LEED“朗缪尔. 16・24. 9368-9373 (2000)
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通讯作者:
M.Wakisaka, K.Suto, J.Inukai, K.Itaya: "Structure of p-Xylene Adlayer Formed on Rh(111) Surface in Vacuum Studied by STM and LEED"Langmuir. 18. 729-733 (2002)
M.Wakisaka、K.Suto、J.Inukai、K.Itaya:“通过 STM 和 LEED 研究真空中在 Rh(111) 表面形成的对二甲苯吸附层的结构”Langmuir。
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共 23 条
    Clarification of Growth Mechanism of Perfect Organic Semiconductor Single Crystal for Electronic Devices
    • 批准号:
      20245038
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $30.95万
    • 财政年份:
      2008
    • 负责人:
      ITAYA Kingo
    • 依托单位:
    Structural Analysis of Solid/Liquid Interfaces by Using UHV-EC STM Combining Systems
    • 批准号:
      07459029
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $0.64万
    • 财政年份:
      1995
    • 负责人:
      ITAYA Kingo
    • 依托单位:
    Analysis of Atomic Surface Structure Using In-Situ AFM
    • 批准号:
      02555166
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research (B)
    • 资助金额:
      $10.11万
    • 财政年份:
      1990
    • 负责人:
      ITAYA Kingo
    • 依托单位:
    In Situ Scanning Tunneling Microscopy for Analysis of Surface
    • 批准号:
      63850160
    • 项目类别:
      Grant-in-Aid for Developmental Scientific Research
    • 资助金额:
      $4.1万
    • 财政年份:
      1988
    • 负责人:
      ITAYA Kingo
    • 依托单位:
    海外基金