Clarification of Growth Mechanism of Perfect Organic Semiconductor Single Crystal for Electronic Devices

利用激光共聚焦显微镜和差示干涉衬度显微镜首次揭示了气相生长的有机半导体Rubrene单晶在较宽的区域具有分子平坦的表面。对晶体生长的观察表明，晶体表面发生了分子台阶的跃迁，有助于阐明生长机理。这些单晶已经显示出很高的FET特性。

We revealed that organic semiconductor rubrene single crystals grown from vapor phase have molecularly flat surface in wide region by using a laser confocal microscope with a differential interference contrast microscope for the first time. The observations of the crystal growth, which is shown the transition of molecular steps on the surface, were contributed to a clarification of growth mechanism. These single crystals have been shown high FET characteristics.