Photonic Structures with III-V-Compounds

在这个研究项目中，我们想要研究我们是否可以通过直接生长过程从（InAl）As或等效材料中制造光子晶体。我们想通过原子光刻技术引起的铟浓度的密度调制来实现折射率的调制。该方法可获得的长度尺度为205nm或更长，对应于材料内的典型波长~ 700nm或更长，即可见光至近红外波长。该方法可以制造具有三维调制其组成的III-V半导体化合物，从而也可以实现折射率。

In this research programme we want to investigate whether we can manufacture a photonic crystal from an (InAl)As or equivalent material through direct growth processes. We want to achieve the modulation of the index of refraction through a density modulation of the Indium concentration which is induced by methods of atom lithography. The length scale accessible by this method is 205 nm or longer and corresponds to typical wavelengths ~700 nm or longer, i.e. visible to near infrared wavelengths within the material. This method could make the fabrication of III-V semiconductor compounds with 3D modulation of its composition and hence also index of refraction possible.