MULTICHRGED ION PRODUCTION OF ECOLOGICAL MATERIALS AND THEIR APPLICATION TO MATERIAL PROCESSING

在2.45 GHz电子回旋共振(ECR)离子源中从固体材料中产生Fe和Si的多电荷离子。多电荷铁离子是通过在ECR等离子体中直接溅射纯物质和以灯丝的形式蒸发产生的。蒸发器从侧壁安装。支撑气体通常选择氩气，工作压力约为10^-4~10^&lt；-3；pa。多电荷离子偶尔从镜面对准靶材或铁蒸发器的另一侧引出，形成多电荷离子束。引出电压通常为10千伏，扇形磁铁分离质量/电荷，离子束由法拉第杯收集。总多电荷铁离子与总离子电流之比最高可达11%左右，从束线上取下法拉第杯，可将离子束引入新建造的部件，对安装在束线上的衬底进行离子辐照。线状探头可以测量垂直和水平方向的束流分布，并可以估算出电流密度和所需的剂量。我们试图通过应用多电荷铁离子束来制备β-FeSi2薄膜，以提高其光催化性能。在硅化物的形成过程中，选择硅片作为衬底。对于二氧化钛衬底，我们在不同的设备上用反应溅射的方法在玻璃或硅片上制备了350~400 mm的薄膜。因此，我们用薄膜光学X射线衍射仪证实了β-FeSi_2在高剂量注入过程中的形成。我们还发现，在可见光区域，蒸馏水在二氧化钛薄膜上的接触角提高了光催化性能，而在紫外光区域没有降解。

Multiply charged ions of Fe and Si are produced from solid materials in a 2.45 GHz electron cyclotron resonance (ECR) ion source. The multicharged Fe ions have been produced by both directly sputtering the pure material and evaporating it in form of filament in the ECR plasma. The evaporator is mounted from the side wall. Argon gas is usually chosen for supporting gas, and the working pressure is about 10^<-4> 〜 10^<-3> Pa. The multicharged ions are extracted from the opposite side of mirror end against the target or the evaporator of the iron, occasionally, and then multicharged ion beam is formed. Extraction voltage is normally 10 kV, the sector magnet separates mass/charge, and the ion beams are collected by the Faraday cup. The ratio of total multicharged Fe ion to the total ion current attains to about 11% at the maximum.The Faraday cup is removed off from the beam line, and the ion beams can be introduced to a newly constructed part for ion irradiation of the substrate installed on the beam line. The beam profiles can be measured both vertically and horizon tally by wire probes, and the current density and the required dose can be estimated.We tried to from β-FeSi_2 and to enhance light catalytic performance of TiO_2 thin films by applying the multicharged Fe ion beams. The Si wafer is chosen for the substrate in the formation of silicides. As for TiO_2 substrate, we use thin films (350 〜 400mm) produced on the glasses or Si wafers by reactive sputtering in our different equipment. Therefore we recognized formation of β-FeSi_2 by x-ray diffractometer with thin-film optics in the high dose implantation. We also recognized enhancement of photo-catalytic performance, I. e., contact angle of the distilled water on TiO_2 thin films, in visible light region without degradation in UV light region.