Study on radiation damages of semiconductor devices for high and low temperature

在核反应堆、高能粒子加速器和人造卫星的使用不断扩大的今天，能够在高辐射环境中正常工作的半导体器件的开发正在世界各地广泛进行。在该项目中，半导体器件的电性能的退化和产生的晶格缺陷，受到1-MeV的电子，1-MeV的快中子，作为通量和辐射源的函数进行了研究。研究了半导体器件的高低温辐照损伤。通过本课题的研究，可以得出以下主要结论：1.器件电性能的退化随辐照注量的增加而增大，随锗含量的增加而减小.电子俘获能级作为产生-复合中心，是导致器件性能下降的主要原因.在300 ℃辐照时，光电流的降低仅为起始值的30%.这一结果表明，在高温辐照下，辐射损伤的产生和恢复是同时进行的.中子辐照的损伤系数几乎与中子辐照相同，比电子辐照大三个数量级。这种差异是由于撞击原子的数量不同，这与质量的差异和形成晶格缺陷的核碰撞的可能性有关。

In these days when the use of nuclear reactors, high-energy particle accelerators and artificial satellites expands, the development of semiconductor devices, which can normally operate in a radiation-rich environment, is extensively taking place everywhere. In the project, the degradation of the electrical performance and the generated lattice defects in semiconductor devices, subjected to 1-MeV electrons, 1-MeV fast neutrons, were investigated as a function of fluence and radiation source. The radiation damages of semiconductor devices for high and low temperature was also studied. The main conclusions which can be made from the research project:1. The degradation of the electrical performance of devices increases with increasing radiation fluence, while it decreases with increasing germanium content.2. The electron capture levels, which act as generation-recombination center, are mainly responsible for the degradation of device performance.3. At 300 ℃ irradiation, the reduction of the photo current is only 30 % of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperature irradiation.4. The damage coefficient for neutron irradiation is nearly the same as for neutron irradiation and is about three orders of magnitude larger than that for electron irradiation. This difference is due to the different number of knock-on atoms, which is correlated with the difference of mass and the possibility of nuclear collisions for the formation of lattice defects.