Development of practical fabrication method of photonic crystals and their application to functional photonic devices

本研究项目的目的是开发实用的高通量光子晶体(PC)大面积周期结构的制作方法，以避免电子束曝光的固有缺陷，并将其应用于实际的光子器件。因此，我们建立了用干涉曝光法在直径为40 mm的大面积上制作周期为250-500 nm的均匀二维周期结构的方法。此外，在这种二维周期结构上不仅制作了二维和三维光子晶体，而且利用这种多维周期结构制作了光泵半导体激光器，实现了分布反馈模式下的脉冲激光振荡。1)用多次干涉曝光方法在30×40 mm的椭圆形大面积上高通量地制作了均匀的2DPC；2)周期结构…的大耦合系数约为100 cm采用Ar-离子研磨，高频刻蚀获得了更多的薄膜，用Cl2气体刻蚀获得了均匀的形状。3)表面方向的发射效率提高了一倍。4)采用InqaAsP/InP32对分布布拉格反射镜(DBR)，在InAlAsP/InP32对分布布拉格反射镜(DBR)的衬底下，利用表面2D光栅实现了InAlAsP/InAlAs多量子阱(MQW)结构的光泵浦脉冲振荡。5)利用严格耦合波分析(RCWA)分析了InGaAsP/InP DBR和a-Si/SiO_2 3D PC的反射特性。结果表明，在前一种结构中，没有反射波长范围，而在后一种结构中，获得了宽波长范围约为1000 nm的完美光子带隙，这些结果几乎包含了所有目标，阐明了基于该技术制作的PC半导体激光器干涉曝光方法的有效性。较少

The purpose of this research project is to develop practical fabrication method of large-area periodic structures for photonic crystals(PC) with high throughput, in order to avoid the intrinsic drawback of electron-beam exposure, and apply the PCs to actual photonic devices. As a result, we established the fabrication method of uniform two-dimensional(2D) periodic structure with periods of 250-500nm in a large area of 40mm diameter by using interference exposure method. Moreover, not only 2D but 3D PCs were fabricated on this 2D periodic structures, and optically-pumped semiconductor laser was fabricated using these multi-dimensional periodic structures to realizes pulsed laser oscillation caused by distributed feedback mode. Precise achieved results are described below.1) High-throughput fabrication method of homogeneous 2D PC in elliptical large area of 30×4Omm was developed using multi interference exposure method.2) Large coupling coefficient of about 100cm^<-1> of the period struc … More tures was achieved by employing Ar-ion milling, shape unification by HF-etching, and RIE with C1_2 gas.3) Enhancement of emission efficiency in the surface direction by as large as twice. was obtained using surface 2D grating.4) Optically-pumped pulsed oscillation was realized for the InAlGaAs/InAlAs multi-quantum well(MQW) structure with InqaAsP/InP 32-paired distributed Bragg reflector(DBR) under the MQW and surface 2D PC on it.5) Wavelength tuning of the lasing mode was attained by about 2nm rotating the optical pumping direction relative to the PC axis.6) Reflection characteristics of InGaAsP/InP DBR and a-Si/SiO_2 3D PC were analyzed by using Rigorous Coupled Wave Analysis(RCWA). It is found that in the former structure there is no-reflection wavelength range, and in the latter perfect photonic bandgap is obtained with wide wavelength range of about 1000nm.These results achieved through this whole research project contain almost all which was settled as objectives, and we clarified the effectiveness of the interference exposure method the PC semiconductor laser fabricated based on this technology. Less