Crystal growth of Sb-based compound semiconductors and jissoprocess for high-speed device circuits

我们研究了用分子束外延生长窄禁带III-V族化合物半导体的晶格失配生长。作为结果，我们已经阐明了它们的基本物理性质，包括晶体缺陷的行为。对于梯度缓冲生长方法，由于合金硬化的影响，存在该方法对于降低缺陷密度有效和无效的两种情况。在GaAs（001）上生长的InAs的情况下，梯度缓冲生长不能有效地降低超过位错对湮灭机制的缺陷密度。在In（Ga）Sb/GaAs（001）的情况下，穿透位错限制了电子输运，因为它们是残余施主的来源;根据位错对湮灭，在距离In（Ga）Sb/GaAs界面较长的区域获得较低的局部施主浓度和较高的局部电子迁移率。在InGaSb沟道和InAlSb势垒的异质结构的情况下， ...更多信息 在GaAs（001）衬底上，由于采用几微米厚的InAlSb缓冲层降低了位错密度，我们得到了具有很高电子迁移率的二维电子气（2DEG），室温下为30000 cm ^2/V-s，低温下为130000 cm ^2/V-s。尽管存在各向异性的层错，2DEG仍表现出各向同性的电子输运性质。此外，我们还观察到Rashba和Dresselhaus自旋轨道相互作用之间的相互作用。我们还研究了用于高速器件电路jisso的As基窄禁带半导体的外延剥离（ELO）和货车德瓦尔斯键合（VWB）过程。我们利用AlAs纳米牺牲层的选择性刻蚀，成功地实现了窄禁带InGaAs/InAlAs异质结的外延-VWB。这是变形系统首次实现ELO-VWB。在陶瓷或Si衬底上获得的器件表现出非常高的电子迁移率，例如在室温下为11000 cm ^2/V-s，这是有史以来报道的最高的VWB器件。我们的研究结果显示了新的可能性异质集成的窄禁带半导体器件使用晶格失配的增长。少

We have investigated lattice-mismatched growth of narrow-gap III-V compound semiconductors using molecular beam epitaxy. As results, we have elucidated their basic physical properties, including behavior of crystalline defects. For graded-buffer growth methods, there are both cases in which the method is effective and ineffective to reduce the defect densities, owing to the influence of alloy hardening. In the case of InAs grown on GaAs(001), the graded-buffer growth is not effective to reduce the defect density beyond the dislocation pair-annihilation mechanisms. In the case of In(Ga)Sb on GaAs(001), the threading dislocations limit the electron transport because they are the origin of the residual donors; lower local donor concentrations and higher local electron mobilities are obtained in regions with longer distances from the In (Ga)Sb/GaAs interface according to the pair-annihilation of the dislocations. In the case of heterostructures of the InGaSb channel and the InAlSb barrier … More on GaAs(001), we obtained two-dimensional electron gases (2DEGs) with very high electron mobilities, such as 30000cm^2/V-s at room temperature and 130000cm^2/V-s at low temperatures, as a result of the reduction of the dislocation density by employing thick InAlSb buffers with several micrometers thickness. The 2DEGs exhibit isotropic electron transport properties in spite of anisotropic stacking faults. Moreover, we observed an interplay between the Rashba and Dresselhaus spin-orbit interactions.We have also investigated epitaxial-lift off (ELO) and van der Waals bonding (VWB) processes of As-based narrow gap semiconductors for the high-speed device circuit jisso. We have successfully realized the ELO-VWB of narrow gap InGaAs/InAlAs metamorphic heterostructures by using selective etching of AlAs nano-sacrificial layers. This is the first realization of ELO-VWB for the metamorphic systems. The obtained devices on ceramic or Si substrates exhibit very high electron mobilities, such as 11000cm^2/V-s at room temperature, which is the highest ever reported for ELO-VWB devices. Our results show new possibilities of heterogeneous integration of narrow-gap semiconductor devices using lattice-mismatched growth. Less