Charge and Interface Properties of Novel Gallium Nitride Transistor Structures for Application in Low-Noise High-Frequency Electronics

氮化镓（GaN）基晶体管为放大器同时实现高功率和低噪声提供了独特的机会。本计画旨在改善氮化镓晶体管的材料与元件设计。它包括一个系统的比较电荷和界面特性与功率和噪声性能测量的高电子迁移率晶体管使用各种各样的新的增长，加工和设备的创新。该计划的预期成果包括GaN材料生长、器件加工和钝化技术领域的关键进展，这将最终导致高频系统超低噪声电子器件的突破性性能。

Gallium Nitride (GaN)-based transistors offer a unique opportunity to simultaneously achieve both high power and low noise from amplifiers. This project aims to improve material and device design of GaN-based transistors. It comprises a systematic comparison of charge and interface properties with power and noise performance measurements of high electron mobility transistors grown using a broad variety of novel growth, processing and device innovations. The expected outcome of the program includes key advances in the areas of GaN materials growth, device processing and passivation technology, which will ultimately lead to breakthrough performance in ultra-low-noise electronics for high frequency systems.