ICP RIE Etching

硅基和GaN基器件的芯片加工是半导体技术研究所(IHT)的一项重要而独特的能力。该技术对微光机电系统的制造以及新型传感器和驱动器元件的研究具有重要意义。对于这些目标，精确、可重复的电介质加工，例如用于晶片的横向结构或作为用于光子模块的集成电介质的加工，是至关重要的。通常，高纵横比、高侧壁质量和精确的纳米结构生成的组合决定了需求概况。此外，对于光子系统，高纵横比以及出众的表面质量和结构保真度是制造功能元件的先决条件，而这只能通过电感耦合等离子体反应离子刻蚀(ICP-RIE)工艺实现。

Chip processing of Si and GaN-based devices is one of the key unique competences of the Institute of Semiconductor Technology (IHT). This technology is of great importance for the fabrication of micro-opto-electro-mechanical systems and the research of novel sensor and actuator elements. For these objectives, the precise, reproducible processing of dielectrics, e.g. for lateral structuring of wafers or processing as integrated dielectrics for photonic modules, is of fundamental importance. Often the combination of high aspect ratio, high sidewall quality and precise nanostructure generation determines the requirement profile. Also for photonic systems, high aspect ratios as well as outstanding surface quality and structural fidelity are prerequisites for the fabrication of functional elements, which can only be achieved by ICP-RIE processes (inductively coupled plasma reactive ion etching).