Study on two dimensional control of orientation selective epitaxial growth of oxide thin films

本文研究了二氧化铈（CeO_2）层在Si（100）衬底上的取向选择性外延（OSE）生长，该生长过程是通过表面电位修饰实现的。采用电子束辐照的方法，实现了二维控制的光学光学系统。利用吸收电流成像技术，我们控制了电子束照射区域的大小和位置，从而首次成功地在Si（100）衬底上实现了CeO_2（100）和CeO_2（110）区域的空间变化生长。

We have studied orientation selective epitaxial (OSE) growth of cerium dioxide (CeO_2) layers on Si(100) substrates, which was enabled by surface potential modification during the growth process. With the aim of two dimensionally controlled OSE, we adopted an electron beam irradiation method. Using absorbed electron current imaging, we controlled the size and position of electron beam irradiated area, which leaded to the first successful results of the spatially varied growth of CeO_2(100) and (110) regions on Si(100) substrates.