Development of in-situ TEM measurement system and its application to nanoelectronics

近年来，电子器件的发展受到人们的广泛关注，其中几何结构和磁性微纳米结构对电子性能的贡献很大。在这项工作中，原位透射电子显微镜（i。e.原位TEM）被引入到这些研究中，其中TEM图像观察和电测量同时进行。为了实现这些实验，开发了特殊的TEM夹具。其中一个是带有压电致动器的保持器（即，e. TEM-STM保持器），另一种是电磁系统（称为TEM-MF保持器）。使用TEM-STM保持器，清楚地观察到电阻性RAM（ReRAM）层内导电细丝的形成和消失。该结果支持ReRAM开关的细丝模型。另一方面，确认了由TEM-MF保持器产生的施加磁场引起的磁畴的运动。原位TEM方法的效用被清楚地证明。

In recent years, development of electronic devices is energetically investigated, where geometrical and magnetic mictro-and nano-structures contribute to the electronic properties. In this work, in-situ transmission electron microscopy (i. e. in-situ TEM) was introduced to these studies, where TEM image observations and electric measurements were simultaneously performed. To realize these experiments, special TEM holders were developed. One of them was a holder with a piezo actuator (i. e. TEM-STM holder), and the other was with an electromagnet system (named as a TEM-MF holder). Using the TEM-STM holder, formation and disappearance of a conductive filament inside the resistive RAM (ReRAM) layer was clearly observed. This result supports the filament model for ReRAM switching. On the other hand, the motion of the magnetic domain caused by the applied magnetic field generated by the TEM-MF holder was confirmed. Utility of in-situ TEM method was clearly demonstrated.