Improvement of Interfacial Functions in Eco-devices Based on Control of Interfacial Nanostructure

本研究旨在阐明三种不同材料界面的功能和结构之间的关系。SiC/ Ti/ Al复合材料的界面结构经退火处理后，与SiC相邻的相由Ti转变为TiAl_3，最后转变为Ti_3SiC_2。电性能也相应于与SiC相邻的相的变化而变化。通过在SiC附近形成Ti_3SiC_2来实现欧姆导电。GaN/ Ti界面欧姆特性的发展主要是由界面反应在GaN亚界面产生的氮空位决定的。<55>Zr_Cu_Ni_5Al_3<30><10>在与Al界面附近的失透开始温度低于<55>Zr_Cu_Ni_5Al_3<30><10>块体的失透开始温度。

The present study aims to clarify the relation between functions and structures of three dissimilar materials interfaces. The interfacial structure of SiC/ Ti/ Al changes the phase adjacent to SiC from Ti to TiAl_3 and finally to Ti_3SiC_2 by annealing. Electrical properties also change corresponding to the change in the phase adjacent to SiC. Ohmic conduction is achieved by forming Ti_3SiC_2 adjacent to SiC. Development of ohmic properties of GaN/ Ti interface is dominated by nitrogen vacancies in GaN sub-interface produced by the interfacial reaction. Devitrification of Zr_<55> Cu_<30> Ni_5Al_<10> in the vicinity of the interface with Al starts at lower temperature than that of Zr_<55> Cu_<30> Ni_5Al_<10> bulk.