Challenge to fabrication and functionalization of novel graphene by advanced plasma processing

点击翻译按钮获取中文摘要

A transfer-free method for growing graphene directly on a SiO2 substrate has been realized for the first time by plasma chemical vapor deposition (PCVD). Using this method, high-quality single-layer graphene sheets can be selectively grown between a Ni film and the SiO2 substrate. Systematic investigations reveal that the relatively thin Ni layer and PCVD are critical to the success of this unique method of graphene growth. Selective edge functionalization of graphene is also realized by mild plasma treatment. The electrical transport properties of graphene can be tuned from p-to n-type with our developed mild plasma treatment.