Current driven domain wall motions in rare earth transition metal alloys and it application toward tera bit information storage

自旋电子学的基本原理之一是磁畴壁可以由自旋极化电流驱动。这些现象表明，可以通过电流而不是磁场直接实现磁反转。然而，在普通磁性材料中，驱动畴壁的临界电流高达1012A/m2。在本研究中，我们发现使用具有垂直磁各向异性的后接地过渡合金可以将临界电流密度降低到1/100。我们研究了薄膜的组成、磁各向异性及其对临界电流密度的影响。我们还开发了一种新的方法来测量导线中的自旋极化。结果表明，具有垂直磁各向异性的后地过渡合金是下一代超高密度信息存储器件的重要候选材料。

One of the fundamentals in spintronics is that the magnetic domain walls can be driven by spin polarized current. Such phenomena indicate that the magnetic reversal can be achieved by current directly rather than by magnetic field. However, the critical current to drive the domain walls is as large as 1012A/m2in normal magnetic materials. In this research, we found the critical current density can be decrease to 1/100 by using rear earth transition alloys with perpendicular magn etic anisotropy. We have investigated the films composition, magnetic anisotropy, and its effect on critical current density. We have also developed a new process to measure spin polarization in the wires. Our results show that rear earth transition alloys with perpendicular magnetic anisotropy are prominent candidate for next generation information storage devices with extremely high density.