Study on band-controlled semiconductor photocatalysts based on anion-doping in Fe- or Cu-based oxides

用磁控溅射法在氮气和Ar混合气体中溅射Fe_2O_3靶材，然后进行后处理，制备了p型N掺杂α-Fe_2O_3。可见光照射下的光电化学测试表明，N-Fe_2O_3具有典型的p型导电阴极光电流。此外，锌的共掺杂还提高了其光催化活性。在N_2和Ar的混合等离子体中，用Fe_2O_3和氧化锌共溅射和后退火的方法制备了带隙为2.0 eV的p型半导体--N，Zn共掺Fe_2O_3。N，Zn-Fe_2O_3表现出很高的光电流，这很可能是由于受主浓度高于N-和Zn-Fe_2O_3。

A p-type N-doped α-Fe_2O_3 was developed by magnetron sputtering of a Fe_2O_3 target in a plasma containing N2 and Ar, followed by postannealing. Photoelectrochemical measurement under visible light irradiation showed that N- Fe_2O_3 exhibits a typical cathodic photocurrent originated from the p-type conduction. Furthermore, the photoactivity was enhanced by codoping of Zn. N,Zn-codoped Fe_2O_3, a p-type semiconductor with a band gap of 2.0 eV, was developed by cosputtering of Fe_2O_3 and ZnO in a plasma mixture of N_2 and Ar, followed by post-annealing. N,Zn- Fe_2O_3 showed a very high photocurrent, most likely originating from a higher concentration of acceptors than those of N- and Zn- Fe_2O_3.