High quality Quantum Dots for 1.55 micron wavelength on GaAs substrate

InAs/GaAs QDs的发射波长度的扩展利用双层QDs的增长已被调查。该扩展已通过对上层（活性） QDs的扩展找到，以优化几个增长参数：较低（种子） QDs的增长温度，InAs的数量可供种子和活性QDs提供。这些最优化的参数降低了种子-QD应变传播向上的密度，并在对活动-QD的介绍中得到了哪些结果。我们对发射波的扩展进行了控制，达到了接近1.4 ·m。我们还研究了GaNAs/AlGaAs在GaAs上的异构结构（100）基础上的增长，由等离子体辅助分子光束外延。通过介绍周期性增长中断和营养素（N）为GaNAs增长期间的中断表面提供，我们实现了GaNAs层中平均N浓度的高控制性。我们观察到GaNAs在N-富表面上的三个维度岛屿增长，InAs/GaAs QD的发射波长的扩展，使用双层QD增长已被调查。该扩展已发现与对上层（活性） QDs的扩展进行了比较优化的几个增长参数：较低（种子） QDs的增长温度，InAs的数量可供种子和活性QDs提供。这些最优化的参数降低了种子-QD应变传播向上的密度，并在对活动-QD的介绍中得到了哪些结果。我们对发射波的扩展进行了控制，达到了接近1.4 ·m。我们还研究了GaNAs/AlGaAs在GaAs上的异构结构（100）基础上的增长，由等离子体辅助分子光束外延。通过介绍周期性增长中断和营养素（N）为GaNAs增长期间的中断表面提供，我们实现了GaNAs层中平均N浓度的高控制性。我们观察到GaNAs在N-丰富表面上的三维岛屿增长。

Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.Extensions of emission wavelength of InAs/GaAs QDs by using bi-layer QD growth have been investigated. The extension has been found with an enlargement of the upper layer (active) QDs occurred by optimizing several growth parameters: growth temperature of lower (seed) QDs, amount of InAs supplied for seed- and active-QDs. These optimized parameters lowered the density of the seed-QDs strain spreading upward, which resulted in an enlargement of the active-QDs. We achieved a control of the extension of emission wavelength up to approximately 1.4 ・m. We also studied the growth of GaNAs/AlGaAs heterostructures on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. By introducing periodic growth interruption and nitrogen (N) supply to the interrupted surfaces during the growth of GaNAs, we achieved high controllability of the average N concentration in GaNAs layers. We observed three-dimensional island growth of GaNAs on the N-rich surfaces.