Spin motive-force device with zinc-blende MnAs nanoparticles

我们致力于发展均匀的铁磁性MNAs纳米颗粒镶嵌在半导体自旋电子材料中的制备技术。我们成功地开发了(1)利用相分解图的调幅分解技术来制备均一的MNAs纳米颗粒。利用这种技术，我们成功地制备了(2)具有强自旋积累和长自旋弛豫时间的单电子晶体管，以及(3)掺锌纳米MNAs和非磁电极的双势垒隧道结，其磁阻通过非弹性共隧道增强。

We aimed at the development of fabrication technology of homogeneous ferromagnetic MnAs nanoparticles embedded in a GaAs matrix for semiconductor spintronic applications. We successfully developed(1) the spinodal decomposition technique using the phase decomposition diagram for fabrication of homogenous MnAs nanoparticles. Using this technique, we successfully fabricated(2) single electron transistors with strong spin accumulation and long spin relaxation time, and(3) double barrier tunnel junctions with zinc-blended MnAs nanoparticles and non-magnetic electrodes with magnetoresistance enhanced by in-elastic co-tunneling.