Development of on-demand single photon emitter by precisive charge number controlling on semiconductor nanoparticles

本研究的目的是通过控制单光子发射器的电子数和折射率来验证按需单光子发射装置。我们利用胶体半导体、硅的晶体缺陷和锗的直接跃迁作为单光子源，利用纳米间隙电极结构，朝着电自旋的按需单光子发射器的方向发展。我们展示了(1)利用纳米间隙电极和胶体纳米颗粒的单电子晶体管，(2)利用硅缺陷工程实现电致发光和光学放大，(3)利用固体浸没透镜构建高数值孔径的共聚焦显微镜，(4)利用光自旋注入直接跃迁锗基结构。

Aim of this study was verification of on-demand single photon emitting devices by controlling the number of electrons and refractive index of single photon emitter. We have been headed for on-demand single photon emitter with electrical spins by using colloidal semiconductor, crystalline defects in Si, and direct transition of Ge as single photon source with nanogap electrodes structure. We have demonstrated (1) single electron transistor with nanogap electrodes and colloidal nanoparticles, (2) electroluminescence and optical amplification by silicon defect engineering, (3) construction of confocal microscope with high numerical aperture by using solid immersion lens, (4) optical spin injection into direct transition of Ge-based structure.