Fundamental study on uniform mixed semiconductor crystal by external force application and control of solid-liquid intercial instability

对InGaSb和Si/Ge等混晶生长过程中的固液界面不稳定性进行了实验和数值研究。用温度梯度法阐明了重力和界面动力学对生长过程中界面不稳定性的影响，并开发了能考虑这些影响的数值模拟程序。在浮区法生长Si/Ge晶体过程中，阐明了熔体中的Marangoni对流，并通过数值模拟阐明了晶体旋转和水平/垂直磁场作用对Marangoni对流抑制的影响。

Solid-liquid interfacial instability during growth of mixed crystal suchi as IngaSb and Si/Ge was experimentally and numerically investigated. Effect of gravity and intefacial kinetics on the interfacial instability during growth by the temperature gradient methid was clarified, and numerical simulation code, which can take into acount of such effects, was developed. In the crystal growth of Si/Ge by the floating zone method, Marangoni convection in the melt was clarified, and effect of crystal rotation and horizontal/vertical magnetic field application effect on the suppression of Marangoni convection was clarified by using numerical simulation.