Application of surface modified colloidal nano-dots for organic memory transistors

研究发现，将半导体胶体纳米点用作并五苯存储晶体管的浮栅时，其转移特性会出现较大的阈值电压偏移。利用这些存储晶体管，证实了对于更小的纳米点，存储效应的最小写入电压更大。这一结果支持了记忆效应是由电子从并五苯分子隧穿进入纳米点引起的模型。此外，基于上述模型，我们通过去除纳米点的有机配体分子来改善存储晶体管的写入特性。结果表明，在不去除配体分子的情况下，写入时间仅为存储器晶体管的1/3左右。

We found that the large threshold voltage shift in the transfer characteristics were obtained when semiconductor colloidal nano-dots were used as floating gates of pentacene memory transistors. With those memory transistors, it was confirmed that the minimum writing voltage of the memory effect was larger for smaller nano-dots. This result supports the model that the memory effect is caused by electrons which tunneled from the pentacene molecules into the nano-dots. Furthermore, based on the above-mentioned model, we improved the writing characteristics of the memory transistors by removing the organic ligand molecules of the nano-dots. As the result, the writing time has become ~1/3 of that for the memory transistors without removing the ligand molecules.