Nonvolatile optical memory with spin vertical-cavity surface emittinglasers

我们的非易失性光存储器采用了一种生长在GaAs（110）衬底上的垂直腔面发射激光器（VCSEL），它具有很长的电子自旋弛豫时间。读出是通过电自旋注入的圆偏振激光来完成的。作为第一步，我们试图证明激光自旋非极化电流注入下使用顺磁接触。然而，发现VCSEL结构的改进是必要的。研究了用于降低阈值电流的氧化电流限制结构和用于在具有较低晶体质量的上DBR下的层处进行电流注入的结构，并且已经建立了它们的制造工艺。

Our nonvolatile optical memory utilizes a vertical-cavity surface-emitting laser (VCSEL) grown on GaAs(110) substrate which has a long electron spin relaxation time. The readout is done by circularly polarized lasing with electrical spin injection. As the first step, we tried to demonstrate lasing under spin unpolarized current injection using a paramagnetic contact. However, it was found that the improvement of the VCSEL structure is necessary. An oxidized current confinement structure for reduction of threshold current, and a structure for current injection at a layer under the upper DBR with a lower crystal quality were investigated, and their fabrication processes have been established.