Correlation of geometrical and electronic properties in metallic nanowires

横向尺寸小于10纳米的晶体金属纳米线（Ag, Pb），在硅衬底上外延生长，将研究电输运和线及其界面形态的相关性。实验将使用高分辨率SEM-STM组合系统进行，该系统将用于生产，表征和操作金属纳米线及其周围环境，直至原子尺度。利用硅化钛触点垫和STM尖端作为移动电压传感器，测量导线的电导及其局部变化，从而研究单线的性能。通过衬底表面结构（步长密度，通过吸附剂重建）和生长参数（沉积速率，温度，吸附剂）的系统变化，将阐明导线界面结构和形貌对电输运性质的影响。为了通过STM尖端和电迁移效应创建瓶颈，将操纵金属丝的几何形状。单一缺陷如晶界、真空或衬底界面上的台阶以及吸附物对电子散射的影响将被访问和量化。

Crystalline metallic nanowires (Ag, Pb) with lateral dimensions below 10 nm down to atomic size, grown epitaxially on silicon substrates, will be studied with respect to correlations of electrical transport and the morpholgy of the wires and their interfaces. The experiments will be carried out using a combined high resolution SEM-STM system, which will be used to produce, characterize, and manipulate metallic nanowires and their surroundings down to the atomic scale. The conductance of the wires and its local variation will be measured by means of titanium silicide contact pads on the substrate and the STM tip as mobile voltage sensor so that the properties of single wires can be studied. By systematic variations of the substrate surface structure (step density, reconstruction via adsorbates) and the growth parameters (deposition rate, temperature, adsorbates) the influence of the wire interface structure and morphology on electrical transport properties will be elucidated. The wire geometry will be manipulated in order to create bottle necks by means of the STM tip and electromigration effects. The effects of single defects like grain boundaries, steps on the vacuum or substrate interface, and adsorbates on electron scattering will be accessed and quantified.